Re-distribution of oxygen at the interface between γ-Al2O3 and TiN
Abstract Interface of TiN electrode with γ-Al2O3 layers was studied using near edge X-ray absorption fine structure, conventional X-ray photoelectron spectroscopy and photoelectron spectroscopy with high energies. Despite the atomic-layer deposited Al2O3 being converted into thermodynamically-stable...
Guardado en:
Autores principales: | E. O. Filatova, A. S. Konashuk, S. S. Sakhonenkov, A. A. Sokolov, V. V. Afanas’ev |
---|---|
Formato: | article |
Lenguaje: | EN |
Publicado: |
Nature Portfolio
2017
|
Materias: | |
Acceso en línea: | https://doaj.org/article/f2532d72df254e3b9b1fa0442fa7826b |
Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
Ejemplares similares
-
Supercapacitance and superinductance of TiN and NbTiN films in the vicinity of superconductor-to-insulator transition
por: A. Yu. Mironov, et al.
Publicado: (2021) -
Constitutional and legal development of Venezuela
por: O. Y. AFANAS’EV
Publicado: (2010) -
Reentrant Resistive Behavior and Dimensional Crossover in Disordered Superconducting TiN Films
por: Svetlana V. Postolova, et al.
Publicado: (2017) -
DISPERSIÓN ASISTIDA POR MAGNETRÓN EN PELÍCULAS DE TiN
por: Ortega de la Rosa,Rubin, et al.
Publicado: (2005) -
Obliquely Bideposited TiN Thin Film with Morphology-Dependent Optical Properties
por: Yi-Jun Jen, et al.
Publicado: (2021)