Luminescence Anomaly of Dipolar Valley Excitons in Homobilayer Semiconductor Moiré Superlattices

In twisted homobilayer transition metal dichalcogenides, intra- and interlayer valley excitons hybridize with the layer configurations spatially varying in the moiré. The ground state valley excitons are trapped at two high-symmetry points with opposite electric dipoles in a moiré supercell, forming...

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Autores principales:	Hongyi Yu, Wang Yao
Formato:	article
Lenguaje:	EN
Publicado:	American Physical Society 2021
Materias:	Physics QC1-999
Acceso en línea:	https://doaj.org/article/f2b683ae3e5e4f9293b8b179a727f9ff
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spelling	oai:doaj.org-article:f2b683ae3e5e4f9293b8b179a727f9ff2021-12-02T15:45:07ZLuminescence Anomaly of Dipolar Valley Excitons in Homobilayer Semiconductor Moiré Superlattices10.1103/PhysRevX.11.0210422160-3308https://doaj.org/article/f2b683ae3e5e4f9293b8b179a727f9ff2021-05-01T00:00:00Zhttp://doi.org/10.1103/PhysRevX.11.021042http://doi.org/10.1103/PhysRevX.11.021042https://doaj.org/toc/2160-3308In twisted homobilayer transition metal dichalcogenides, intra- and interlayer valley excitons hybridize with the layer configurations spatially varying in the moiré. The ground state valley excitons are trapped at two high-symmetry points with opposite electric dipoles in a moiré supercell, forming a honeycomb superlattice of nearest-neighbor dipolar attraction. We find that the spatial texture of layer configuration results in a luminescence anomaly of the moiré trapped excitons, where a tiny displacement by interactions dramatically increases the brightness and changes polarization from circular to linear. At full filling, radiative recombination predominantly occurs at edges and vacancies of the exciton superlattice. The anomaly also manifests in the cascaded emission of small clusters, producing chains of polarization entangled photons. An interlayer bias can switch the superlattice into a single-orbital triangular lattice with repulsive interactions only, where the luminescence anomaly can be exploited to distinguish ordered states and domain boundaries at fractional filling.Hongyi YuWang YaoAmerican Physical SocietyarticlePhysicsQC1-999ENPhysical Review X, Vol 11, Iss 2, p 021042 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Physics QC1-999
spellingShingle	Physics QC1-999 Hongyi Yu Wang Yao Luminescence Anomaly of Dipolar Valley Excitons in Homobilayer Semiconductor Moiré Superlattices
description	In twisted homobilayer transition metal dichalcogenides, intra- and interlayer valley excitons hybridize with the layer configurations spatially varying in the moiré. The ground state valley excitons are trapped at two high-symmetry points with opposite electric dipoles in a moiré supercell, forming a honeycomb superlattice of nearest-neighbor dipolar attraction. We find that the spatial texture of layer configuration results in a luminescence anomaly of the moiré trapped excitons, where a tiny displacement by interactions dramatically increases the brightness and changes polarization from circular to linear. At full filling, radiative recombination predominantly occurs at edges and vacancies of the exciton superlattice. The anomaly also manifests in the cascaded emission of small clusters, producing chains of polarization entangled photons. An interlayer bias can switch the superlattice into a single-orbital triangular lattice with repulsive interactions only, where the luminescence anomaly can be exploited to distinguish ordered states and domain boundaries at fractional filling.
format	article
author	Hongyi Yu Wang Yao
author_facet	Hongyi Yu Wang Yao
author_sort	Hongyi Yu
title	Luminescence Anomaly of Dipolar Valley Excitons in Homobilayer Semiconductor Moiré Superlattices
title_short	Luminescence Anomaly of Dipolar Valley Excitons in Homobilayer Semiconductor Moiré Superlattices
title_full	Luminescence Anomaly of Dipolar Valley Excitons in Homobilayer Semiconductor Moiré Superlattices
title_fullStr	Luminescence Anomaly of Dipolar Valley Excitons in Homobilayer Semiconductor Moiré Superlattices
title_full_unstemmed	Luminescence Anomaly of Dipolar Valley Excitons in Homobilayer Semiconductor Moiré Superlattices
title_sort	luminescence anomaly of dipolar valley excitons in homobilayer semiconductor moiré superlattices
publisher	American Physical Society
publishDate	2021
url	https://doaj.org/article/f2b683ae3e5e4f9293b8b179a727f9ff
work_keys_str_mv	AT hongyiyu luminescenceanomalyofdipolarvalleyexcitonsinhomobilayersemiconductormoiresuperlattices AT wangyao luminescenceanomalyofdipolarvalleyexcitonsinhomobilayersemiconductormoiresuperlattices
_version_	1718385785371099136

Luminescence Anomaly of Dipolar Valley Excitons in Homobilayer Semiconductor Moiré Superlattices

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