Luminescence Anomaly of Dipolar Valley Excitons in Homobilayer Semiconductor Moiré Superlattices
In twisted homobilayer transition metal dichalcogenides, intra- and interlayer valley excitons hybridize with the layer configurations spatially varying in the moiré. The ground state valley excitons are trapped at two high-symmetry points with opposite electric dipoles in a moiré supercell, forming...
Guardado en:
Autores principales: | Hongyi Yu, Wang Yao |
---|---|
Formato: | article |
Lenguaje: | EN |
Publicado: |
American Physical Society
2021
|
Materias: | |
Acceso en línea: | https://doaj.org/article/f2b683ae3e5e4f9293b8b179a727f9ff |
Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
Ejemplares similares
-
Unconventional satellite resistance peaks in moiré superlattice of h-BN/ AB-stacked tetralayer-graphene heterostructures
por: Fumiya Mukai, et al.
Publicado: (2021) -
Luminescence of porous semiconductor media covered with metallic films
por: Postolache, Vitalie
Publicado: (2016) -
Kinetics of the excitonic luminescence in
MoS2:Cl2 layered crystals
por: Colev, Andrei
Publicado: (2009) -
Interference of resonance luminescence of exciton polaritons in CuGaS2 crystals
por: Sîrbu, Nicolae, et al.
Publicado: (2007) -
Moiré Surface States and Enhanced Superconductivity in Topological Insulators
por: Taige Wang, et al.
Publicado: (2021)