Multi-Foci Division of Nonlinear Energy Absorption on Ultrashort Pulse Laser Singulation of Sapphire Wafers

The multi-foci division of through thickness nonlinear pulse energy absorption on ultrashort pulse laser singulation of single side polished sapphire wafers has been investigated. Firstly, it disclosed the enhancement of energy absorption by the total internal reflection of the laser beam exiting fr...

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Autores principales: Celescia Siew Mun Lye, Zhongke Wang, Yee Cheong Lam
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Lenguaje:EN
Publicado: MDPI AG 2021
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spelling oai:doaj.org-article:f2b91d5bb57d4b8989b379d0ab1372222021-11-25T18:23:09ZMulti-Foci Division of Nonlinear Energy Absorption on Ultrashort Pulse Laser Singulation of Sapphire Wafers10.3390/mi121113282072-666Xhttps://doaj.org/article/f2b91d5bb57d4b8989b379d0ab1372222021-10-01T00:00:00Zhttps://www.mdpi.com/2072-666X/12/11/1328https://doaj.org/toc/2072-666XThe multi-foci division of through thickness nonlinear pulse energy absorption on ultrashort pulse laser singulation of single side polished sapphire wafers has been investigated. Firstly, it disclosed the enhancement of energy absorption by the total internal reflection of the laser beam exiting from an unpolished rough surface. Secondly, by optimizing energy distribution between foci and their proximity, favorable multi-foci energy absorption was induced. Lastly, for effective nonlinear energy absorption for wafer separation, it highlighted the importance of high laser pulse energy fluence at low pulse repetition rates with optimized energy distribution, and the inadequacy of increasing energy deposition through reducing scanning speed alone. This study concluded that for effective wafer separation, despite the lower pulse energy per focus, energy should be divided over more foci with closer spatial proximity. Once the power density per pulse per focus reached a threshold in the order of 1012 W/cm<sup>2</sup>, with approximately 15 <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mi mathvariant="sans-serif">μ</mi></semantics></math></inline-formula>m between two adjacent foci, wafer could be separated with foci evenly distributed over the entire wafer thickness. When the foci spacing reduced to 5 <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mi mathvariant="sans-serif">μ</mi></semantics></math></inline-formula>m, wafer separation could be achieved with pulse energy concentrated only at foci distributed over only the upper or middle one-third wafer thickness.Celescia Siew Mun LyeZhongke WangYee Cheong LamMDPI AGarticlepulse energy divisionspatial proximity of focisapphire wafer singulationsurface morphologymulti-foci laser micro processingMechanical engineering and machineryTJ1-1570ENMicromachines, Vol 12, Iss 1328, p 1328 (2021)
institution DOAJ
collection DOAJ
language EN
topic pulse energy division
spatial proximity of foci
sapphire wafer singulation
surface morphology
multi-foci laser micro processing
Mechanical engineering and machinery
TJ1-1570
spellingShingle pulse energy division
spatial proximity of foci
sapphire wafer singulation
surface morphology
multi-foci laser micro processing
Mechanical engineering and machinery
TJ1-1570
Celescia Siew Mun Lye
Zhongke Wang
Yee Cheong Lam
Multi-Foci Division of Nonlinear Energy Absorption on Ultrashort Pulse Laser Singulation of Sapphire Wafers
description The multi-foci division of through thickness nonlinear pulse energy absorption on ultrashort pulse laser singulation of single side polished sapphire wafers has been investigated. Firstly, it disclosed the enhancement of energy absorption by the total internal reflection of the laser beam exiting from an unpolished rough surface. Secondly, by optimizing energy distribution between foci and their proximity, favorable multi-foci energy absorption was induced. Lastly, for effective nonlinear energy absorption for wafer separation, it highlighted the importance of high laser pulse energy fluence at low pulse repetition rates with optimized energy distribution, and the inadequacy of increasing energy deposition through reducing scanning speed alone. This study concluded that for effective wafer separation, despite the lower pulse energy per focus, energy should be divided over more foci with closer spatial proximity. Once the power density per pulse per focus reached a threshold in the order of 1012 W/cm<sup>2</sup>, with approximately 15 <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mi mathvariant="sans-serif">μ</mi></semantics></math></inline-formula>m between two adjacent foci, wafer could be separated with foci evenly distributed over the entire wafer thickness. When the foci spacing reduced to 5 <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mi mathvariant="sans-serif">μ</mi></semantics></math></inline-formula>m, wafer separation could be achieved with pulse energy concentrated only at foci distributed over only the upper or middle one-third wafer thickness.
format article
author Celescia Siew Mun Lye
Zhongke Wang
Yee Cheong Lam
author_facet Celescia Siew Mun Lye
Zhongke Wang
Yee Cheong Lam
author_sort Celescia Siew Mun Lye
title Multi-Foci Division of Nonlinear Energy Absorption on Ultrashort Pulse Laser Singulation of Sapphire Wafers
title_short Multi-Foci Division of Nonlinear Energy Absorption on Ultrashort Pulse Laser Singulation of Sapphire Wafers
title_full Multi-Foci Division of Nonlinear Energy Absorption on Ultrashort Pulse Laser Singulation of Sapphire Wafers
title_fullStr Multi-Foci Division of Nonlinear Energy Absorption on Ultrashort Pulse Laser Singulation of Sapphire Wafers
title_full_unstemmed Multi-Foci Division of Nonlinear Energy Absorption on Ultrashort Pulse Laser Singulation of Sapphire Wafers
title_sort multi-foci division of nonlinear energy absorption on ultrashort pulse laser singulation of sapphire wafers
publisher MDPI AG
publishDate 2021
url https://doaj.org/article/f2b91d5bb57d4b8989b379d0ab137222
work_keys_str_mv AT celesciasiewmunlye multifocidivisionofnonlinearenergyabsorptiononultrashortpulselasersingulationofsapphirewafers
AT zhongkewang multifocidivisionofnonlinearenergyabsorptiononultrashortpulselasersingulationofsapphirewafers
AT yeecheonglam multifocidivisionofnonlinearenergyabsorptiononultrashortpulselasersingulationofsapphirewafers
_version_ 1718411294753685504