A highly CMOS compatible hafnia-based ferroelectric diode

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A highly CMOS compatible hafnia-based ferroelectric diode

Designing reliable, scalable and high speed computing systems remains a challenge. Here, the authors identify noncentrosymmetric orthorhombic phase in HZO film and demonstrate a CMOS compatible 3D Vertical HZO-based ferroelectric diode array with self-selective property and 20 ns of speed operation....

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Détails bibliographiques
Auteurs principaux:	Qing Luo, Yan Cheng, Jianguo Yang, Rongrong Cao, Haili Ma, Yang Yang, Rong Huang, Wei Wei, Yonghui Zheng, Tiancheng Gong, Jie Yu, Xiaoxin Xu, Peng Yuan, Xiaoyan Li, Lu Tai, Haoran Yu, Dashan Shang, Qi Liu, Bing Yu, Qiwei Ren, Hangbing Lv, Ming Liu
Format:	article
Langue:	EN
Publié:	Nature Portfolio 2020
Sujets:	Science Q
Accès en ligne:	https://doaj.org/article/f2f741492abf4ccca22fd4e425a534c9
Tags:	Ajouter un tag Pas de tags, Soyez le premier à ajouter un tag!

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