Non-thermal resistive switching in Mott insulator nanowires

Despite intensive research on the electrically driven insulator-to-metal transition, this phenomenon is not well understood. Using quasi 1D nanowires of two Mott insulators, the authors reveal the central role of defects in enabling a non-thermal doping driven insulator-to metal transition.

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Detalles Bibliográficos
Autores principales: Yoav Kalcheim, Alberto Camjayi, Javier del Valle, Pavel Salev, Marcelo Rozenberg, Ivan K. Schuller
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2020
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Acceso en línea:https://doaj.org/article/f3056166bb4a4d12879ee502584d4cc0
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Descripción
Sumario:Despite intensive research on the electrically driven insulator-to-metal transition, this phenomenon is not well understood. Using quasi 1D nanowires of two Mott insulators, the authors reveal the central role of defects in enabling a non-thermal doping driven insulator-to metal transition.