A Hybrid Non-destructive Measuring Method of Three-dimensional Profile of Through Silicon Vias for Realization of Smart Devices

Abstract Smart devices have been fabricated based on design concept of multiple layer structures which require through silicon vias to transfer electric signals between stacked layers. Because even a single defect leads to fail of the packaged devices, the dimensions of the through silicon vias are...

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Autores principales:	Heulbi Ahn, Jaeseok Bae, Jungjae Park, Jonghan Jin
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2018
Materias:	Through-silicon Vias (TSV) Three-dimensional Profile Major Uncertainty Components Optical Path Difference (OPD) International Standard Guidelines Medicine R Science Q
Acceso en línea:	https://doaj.org/article/f47fd52793a441f998c37807c90ec457
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spelling	oai:doaj.org-article:f47fd52793a441f998c37807c90ec4572021-12-02T15:07:56ZA Hybrid Non-destructive Measuring Method of Three-dimensional Profile of Through Silicon Vias for Realization of Smart Devices10.1038/s41598-018-33728-w2045-2322https://doaj.org/article/f47fd52793a441f998c37807c90ec4572018-10-01T00:00:00Zhttps://doi.org/10.1038/s41598-018-33728-whttps://doaj.org/toc/2045-2322Abstract Smart devices have been fabricated based on design concept of multiple layer structures which require through silicon vias to transfer electric signals between stacked layers. Because even a single defect leads to fail of the packaged devices, the dimensions of the through silicon vias are needed to be measured through whole sampling inspection process. For that, a novel hybrid optical probe working based on optical interferometry, confocal microscopy and optical microscopy was proposed and realized for enhancing inspection efficiency in this report. The optical microscope was utilized for coarsely monitoring the specimen in a large field of view, and the other methods of interferometry and confocal microscopy were used to measure dimensions of small features with high speed by eliminating time-consuming process of the vertical scanning. Owing to the importance of the reliability, the uncertainty evaluation of the proposed method was fulfilled, which offers a practical example for estimating the performance of inspection machines operating with numerous principles at semiconductor manufacturing sites. According to the measurement results, the mean values of the diameter and depth were 40.420 µm and 5.954 µm with the expanded uncertainty of 0.050 µm (k = 2) and 0.208 µm (k = 2), respectively.Heulbi AhnJaeseok BaeJungjae ParkJonghan JinNature PortfolioarticleThrough-silicon Vias (TSV)Three-dimensional ProfileMajor Uncertainty ComponentsOptical Path Difference (OPD)International Standard GuidelinesMedicineRScienceQENScientific Reports, Vol 8, Iss 1, Pp 1-9 (2018)
institution	DOAJ
collection	DOAJ
language	EN
topic	Through-silicon Vias (TSV) Three-dimensional Profile Major Uncertainty Components Optical Path Difference (OPD) International Standard Guidelines Medicine R Science Q
spellingShingle	Through-silicon Vias (TSV) Three-dimensional Profile Major Uncertainty Components Optical Path Difference (OPD) International Standard Guidelines Medicine R Science Q Heulbi Ahn Jaeseok Bae Jungjae Park Jonghan Jin A Hybrid Non-destructive Measuring Method of Three-dimensional Profile of Through Silicon Vias for Realization of Smart Devices
description	Abstract Smart devices have been fabricated based on design concept of multiple layer structures which require through silicon vias to transfer electric signals between stacked layers. Because even a single defect leads to fail of the packaged devices, the dimensions of the through silicon vias are needed to be measured through whole sampling inspection process. For that, a novel hybrid optical probe working based on optical interferometry, confocal microscopy and optical microscopy was proposed and realized for enhancing inspection efficiency in this report. The optical microscope was utilized for coarsely monitoring the specimen in a large field of view, and the other methods of interferometry and confocal microscopy were used to measure dimensions of small features with high speed by eliminating time-consuming process of the vertical scanning. Owing to the importance of the reliability, the uncertainty evaluation of the proposed method was fulfilled, which offers a practical example for estimating the performance of inspection machines operating with numerous principles at semiconductor manufacturing sites. According to the measurement results, the mean values of the diameter and depth were 40.420 µm and 5.954 µm with the expanded uncertainty of 0.050 µm (k = 2) and 0.208 µm (k = 2), respectively.
format	article
author	Heulbi Ahn Jaeseok Bae Jungjae Park Jonghan Jin
author_facet	Heulbi Ahn Jaeseok Bae Jungjae Park Jonghan Jin
author_sort	Heulbi Ahn
title	A Hybrid Non-destructive Measuring Method of Three-dimensional Profile of Through Silicon Vias for Realization of Smart Devices
title_short	A Hybrid Non-destructive Measuring Method of Three-dimensional Profile of Through Silicon Vias for Realization of Smart Devices
title_full	A Hybrid Non-destructive Measuring Method of Three-dimensional Profile of Through Silicon Vias for Realization of Smart Devices
title_fullStr	A Hybrid Non-destructive Measuring Method of Three-dimensional Profile of Through Silicon Vias for Realization of Smart Devices
title_full_unstemmed	A Hybrid Non-destructive Measuring Method of Three-dimensional Profile of Through Silicon Vias for Realization of Smart Devices
title_sort	hybrid non-destructive measuring method of three-dimensional profile of through silicon vias for realization of smart devices
publisher	Nature Portfolio
publishDate	2018
url	https://doaj.org/article/f47fd52793a441f998c37807c90ec457
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A Hybrid Non-destructive Measuring Method of Three-dimensional Profile of Through Silicon Vias for Realization of Smart Devices

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