A Hybrid Non-destructive Measuring Method of Three-dimensional Profile of Through Silicon Vias for Realization of Smart Devices

Abstract Smart devices have been fabricated based on design concept of multiple layer structures which require through silicon vias to transfer electric signals between stacked layers. Because even a single defect leads to fail of the packaged devices, the dimensions of the through silicon vias are...

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Autores principales: Heulbi Ahn, Jaeseok Bae, Jungjae Park, Jonghan Jin
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2018
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Acceso en línea:https://doaj.org/article/f47fd52793a441f998c37807c90ec457
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