Large quantum-spin-Hall gap in single-layer 1T′ WSe2

Large quantum-spin-Hall gap in single-layer 1T′ WSe2

The current known two-dimensional topological insulators with small band gaps limit the potential for room temperature applications. Here, Chen et al. observe a sizable gap of 129 meV in a 1T'-WSe2 single layer grown on bilayer graphene with in-gap edge state near the layer boundary.

Guardado en:
Detalles Bibliográficos
Autores principales: P. Chen, Woei Wu Pai, Y.-H. Chan, W.-L. Sun, C.-Z. Xu, D.-S. Lin, M. Y. Chou, A.-V. Fedorov, T.-C. Chiang
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2018
Materias:
Science
Q
Acceso en línea:https://doaj.org/article/f4865d555ad54ad8a0b7483e6579d3c3
Etiquetas: Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!

Ejemplares similares

Ejemplares similares