Effect of current density on the porous silicon preparation as gas sensors**

In this study, porous silicon (PSi) was used to manufacture gas sensors for acetone and ethanol. Samples of PSi were successfully prepared by photoelectrochemical etching and applied as an acetone and ethanol gas sensor at room temperature at various current densities J= 12, 24 and 30 mA/cm2 with an...

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Autores principales:	Kareem Muna H., Abdul Hussein Adi M., Hussein Haitham Talib
Formato:	article
Lenguaje:	EN
Publicado:	De Gruyter 2021
Materias:	porous silicon properties of porous silicon gas sensor acetone gas Mechanical engineering and machinery TJ1-1570
Acceso en línea:	https://doaj.org/article/f49b1769dafa4643a4354243a7f6147c
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spelling	oai:doaj.org-article:f49b1769dafa4643a4354243a7f6147c2021-12-05T14:10:52ZEffect of current density on the porous silicon preparation as gas sensors**0334-89382191-024310.1515/jmbm-2021-0027https://doaj.org/article/f49b1769dafa4643a4354243a7f6147c2021-11-01T00:00:00Zhttps://doi.org/10.1515/jmbm-2021-0027https://doaj.org/toc/0334-8938https://doaj.org/toc/2191-0243In this study, porous silicon (PSi) was used to manufacture gas sensors for acetone and ethanol. Samples of PSi were successfully prepared by photoelectrochemical etching and applied as an acetone and ethanol gas sensor at room temperature at various current densities J= 12, 24 and 30 mA/cm2 with an etching time of 10 min and hydrofluoric acid concentration of 40%. Well-ordered n-type PSi (100) was carefully studied for its chemical composition, surface structure and bond configuration of the surface via X-ray diffraction, atomic force microscopy, Fourier transform infrared spectroscopy and photoluminescence tests. Results showed that the best sensitivity of PSi was to acetone gas than to ethanol under the same conditions at an etching current density of 30 mA/cm2, reaching about 2.413 at a concentration of 500 parts per million. The PSi layers served as low-cost and high-quality acetone gas sensors. Thus, PSi can be used to replace expensive materials used in gas sensors that function at low temperatures, including room temperature. The material has an exceptionally high surface-to-volume ratio (increasing surface area) and demonstrates ease of fabrication and compatibility with manufacturing processes of silicon microelectronics.Kareem Muna H.Abdul Hussein Adi M.Hussein Haitham TalibDe Gruyterarticleporous siliconproperties of porous silicongas sensoracetone gasMechanical engineering and machineryTJ1-1570ENJournal of the Mechanical Behavior of Materials, Vol 30, Iss 1, Pp 257-264 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	porous silicon properties of porous silicon gas sensor acetone gas Mechanical engineering and machinery TJ1-1570
spellingShingle	porous silicon properties of porous silicon gas sensor acetone gas Mechanical engineering and machinery TJ1-1570 Kareem Muna H. Abdul Hussein Adi M. Hussein Haitham Talib Effect of current density on the porous silicon preparation as gas sensors**
description	In this study, porous silicon (PSi) was used to manufacture gas sensors for acetone and ethanol. Samples of PSi were successfully prepared by photoelectrochemical etching and applied as an acetone and ethanol gas sensor at room temperature at various current densities J= 12, 24 and 30 mA/cm2 with an etching time of 10 min and hydrofluoric acid concentration of 40%. Well-ordered n-type PSi (100) was carefully studied for its chemical composition, surface structure and bond configuration of the surface via X-ray diffraction, atomic force microscopy, Fourier transform infrared spectroscopy and photoluminescence tests. Results showed that the best sensitivity of PSi was to acetone gas than to ethanol under the same conditions at an etching current density of 30 mA/cm2, reaching about 2.413 at a concentration of 500 parts per million. The PSi layers served as low-cost and high-quality acetone gas sensors. Thus, PSi can be used to replace expensive materials used in gas sensors that function at low temperatures, including room temperature. The material has an exceptionally high surface-to-volume ratio (increasing surface area) and demonstrates ease of fabrication and compatibility with manufacturing processes of silicon microelectronics.
format	article
author	Kareem Muna H. Abdul Hussein Adi M. Hussein Haitham Talib
author_facet	Kareem Muna H. Abdul Hussein Adi M. Hussein Haitham Talib
author_sort	Kareem Muna H.
title	Effect of current density on the porous silicon preparation as gas sensors**
title_short	Effect of current density on the porous silicon preparation as gas sensors**
title_full	Effect of current density on the porous silicon preparation as gas sensors**
title_fullStr	Effect of current density on the porous silicon preparation as gas sensors**
title_full_unstemmed	Effect of current density on the porous silicon preparation as gas sensors**
title_sort	effect of current density on the porous silicon preparation as gas sensors**
publisher	De Gruyter
publishDate	2021
url	https://doaj.org/article/f49b1769dafa4643a4354243a7f6147c
work_keys_str_mv	AT kareemmunah effectofcurrentdensityontheporoussiliconpreparationasgassensors AT abdulhusseinadim effectofcurrentdensityontheporoussiliconpreparationasgassensors AT husseinhaithamtalib effectofcurrentdensityontheporoussiliconpreparationasgassensors
_version_	1718371656474296320

Effect of current density on the porous silicon preparation as gas sensors**

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