Interstitial boron-doped mesoporous semiconductor oxides for ultratransparent energy storage

Realizing transparent supercapacitor is hindered by the trade-off between capacitance and transparency of the electrode material. Here, the authors report an interstitial doping strategy to boost the electrochemical activity of transparent conducting oxides while maintaining their optical feature.

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Autores principales:	Jian Zhi, Min Zhou, Zhen Zhang, Oliver Reiser, Fuqiang Huang
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/f4d7a6ff7e7748b2a78c8a2e284890d5
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id	oai:doaj.org-article:f4d7a6ff7e7748b2a78c8a2e284890d5
record_format	dspace
spelling	oai:doaj.org-article:f4d7a6ff7e7748b2a78c8a2e284890d52021-12-02T10:49:14ZInterstitial boron-doped mesoporous semiconductor oxides for ultratransparent energy storage10.1038/s41467-020-20352-42041-1723https://doaj.org/article/f4d7a6ff7e7748b2a78c8a2e284890d52021-01-01T00:00:00Zhttps://doi.org/10.1038/s41467-020-20352-4https://doaj.org/toc/2041-1723Realizing transparent supercapacitor is hindered by the trade-off between capacitance and transparency of the electrode material. Here, the authors report an interstitial doping strategy to boost the electrochemical activity of transparent conducting oxides while maintaining their optical feature.Jian ZhiMin ZhouZhen ZhangOliver ReiserFuqiang HuangNature PortfolioarticleScienceQENNature Communications, Vol 12, Iss 1, Pp 1-12 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Jian Zhi Min Zhou Zhen Zhang Oliver Reiser Fuqiang Huang Interstitial boron-doped mesoporous semiconductor oxides for ultratransparent energy storage
description	Realizing transparent supercapacitor is hindered by the trade-off between capacitance and transparency of the electrode material. Here, the authors report an interstitial doping strategy to boost the electrochemical activity of transparent conducting oxides while maintaining their optical feature.
format	article
author	Jian Zhi Min Zhou Zhen Zhang Oliver Reiser Fuqiang Huang
author_facet	Jian Zhi Min Zhou Zhen Zhang Oliver Reiser Fuqiang Huang
author_sort	Jian Zhi
title	Interstitial boron-doped mesoporous semiconductor oxides for ultratransparent energy storage
title_short	Interstitial boron-doped mesoporous semiconductor oxides for ultratransparent energy storage
title_full	Interstitial boron-doped mesoporous semiconductor oxides for ultratransparent energy storage
title_fullStr	Interstitial boron-doped mesoporous semiconductor oxides for ultratransparent energy storage
title_full_unstemmed	Interstitial boron-doped mesoporous semiconductor oxides for ultratransparent energy storage
title_sort	interstitial boron-doped mesoporous semiconductor oxides for ultratransparent energy storage
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/f4d7a6ff7e7748b2a78c8a2e284890d5
work_keys_str_mv	AT jianzhi interstitialborondopedmesoporoussemiconductoroxidesforultratransparentenergystorage AT minzhou interstitialborondopedmesoporoussemiconductoroxidesforultratransparentenergystorage AT zhenzhang interstitialborondopedmesoporoussemiconductoroxidesforultratransparentenergystorage AT oliverreiser interstitialborondopedmesoporoussemiconductoroxidesforultratransparentenergystorage AT fuqianghuang interstitialborondopedmesoporoussemiconductoroxidesforultratransparentenergystorage
_version_	1718396623957000192

Interstitial boron-doped mesoporous semiconductor oxides for ultratransparent energy storage

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