Room-temperature synthesis of earth-abundant semiconductor ZnSiN2 on amorphous carbon

Abstract This manuscript reports room-temperature one-step synthesis of earth-abundant semiconductor ZnSiN2 on amorphous carbon substrates using radio frequency reactive magnetron co-sputtering. Transmission Electron Microscopy and Rutherford Backscattering Spectrometry analysis demonstrated that th...

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Autores principales:	Horácio Coelho-Júnior, Bruno G. Silva, Cilene Labre, Renan P. Loreto, Rubem L. Sommer
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/f4fb5b6097fa486c90f44ec1e600f3b8
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spelling	oai:doaj.org-article:f4fb5b6097fa486c90f44ec1e600f3b82021-12-02T10:44:08ZRoom-temperature synthesis of earth-abundant semiconductor ZnSiN2 on amorphous carbon10.1038/s41598-021-82845-62045-2322https://doaj.org/article/f4fb5b6097fa486c90f44ec1e600f3b82021-02-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-82845-6https://doaj.org/toc/2045-2322Abstract This manuscript reports room-temperature one-step synthesis of earth-abundant semiconductor ZnSiN2 on amorphous carbon substrates using radio frequency reactive magnetron co-sputtering. Transmission Electron Microscopy and Rutherford Backscattering Spectrometry analysis demonstrated that the synthesis has occurred as ZnSiN2 nanocrystals in the orthorhombic phase, uniformly distributed on amorphous carbon. The technique of large-area deposition on an amorphous substrate can be interesting for flexible electronics technologies. Our results open possibilities for environmentally friendly semiconductor devices, leading to the development of greener technologies.Horácio Coelho-JúniorBruno G. SilvaCilene LabreRenan P. LoretoRubem L. SommerNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-6 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Horácio Coelho-Júnior Bruno G. Silva Cilene Labre Renan P. Loreto Rubem L. Sommer Room-temperature synthesis of earth-abundant semiconductor ZnSiN2 on amorphous carbon
description	Abstract This manuscript reports room-temperature one-step synthesis of earth-abundant semiconductor ZnSiN2 on amorphous carbon substrates using radio frequency reactive magnetron co-sputtering. Transmission Electron Microscopy and Rutherford Backscattering Spectrometry analysis demonstrated that the synthesis has occurred as ZnSiN2 nanocrystals in the orthorhombic phase, uniformly distributed on amorphous carbon. The technique of large-area deposition on an amorphous substrate can be interesting for flexible electronics technologies. Our results open possibilities for environmentally friendly semiconductor devices, leading to the development of greener technologies.
format	article
author	Horácio Coelho-Júnior Bruno G. Silva Cilene Labre Renan P. Loreto Rubem L. Sommer
author_facet	Horácio Coelho-Júnior Bruno G. Silva Cilene Labre Renan P. Loreto Rubem L. Sommer
author_sort	Horácio Coelho-Júnior
title	Room-temperature synthesis of earth-abundant semiconductor ZnSiN2 on amorphous carbon
title_short	Room-temperature synthesis of earth-abundant semiconductor ZnSiN2 on amorphous carbon
title_full	Room-temperature synthesis of earth-abundant semiconductor ZnSiN2 on amorphous carbon
title_fullStr	Room-temperature synthesis of earth-abundant semiconductor ZnSiN2 on amorphous carbon
title_full_unstemmed	Room-temperature synthesis of earth-abundant semiconductor ZnSiN2 on amorphous carbon
title_sort	room-temperature synthesis of earth-abundant semiconductor znsin2 on amorphous carbon
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/f4fb5b6097fa486c90f44ec1e600f3b8
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Room-temperature synthesis of earth-abundant semiconductor ZnSiN2 on amorphous carbon

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