Ultrahigh drive current and large selectivity in GeS selector

Designing efficient selector devices for large-scale nonvolatile memory and neuromorphic array systems remains a challenge. Here, the authors propose a two-terminal ovonic threshold switching selector device with a large drive current density and a high nonlinearity, capable emulating stochastic int...

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Autores principales: Shujing Jia, Huanglong Li, Tamihiro Gotoh, Christophe Longeaud, Bin Zhang, Juan Lyu, Shilong Lv, Min Zhu, Zhitang Song, Qi Liu, John Robertson, Ming Liu
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2020
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Acceso en línea:https://doaj.org/article/f55c3b2ef22149ad897218f33edd1c0d
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Sumario:Designing efficient selector devices for large-scale nonvolatile memory and neuromorphic array systems remains a challenge. Here, the authors propose a two-terminal ovonic threshold switching selector device with a large drive current density and a high nonlinearity, capable emulating stochastic integrate-and-fire neuron behavior.