Study of patterned GaAsSbN nanowires using sigmoidal model

Abstract This study presents the first report on patterned nanowires (NWs) of dilute nitride GaAsSbN on p-Si (111) substrates by self-catalyzed plasma-assisted molecular beam epitaxy. Patterned NW array with GaAsSbN of Sb composition of 3% as a stem provided the best yield of vertical NWs. Large ban...

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Autores principales: Sean Johnson, Rabin Pokharel, Michael Lowe, Hirandeep Kuchoor, Surya Nalamati, Klinton Davis, Hemali Rathnayake, Shanthi Iyer
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2021
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Acceso en línea:https://doaj.org/article/f560db38523747f589ea4326819b7479
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Sumario:Abstract This study presents the first report on patterned nanowires (NWs) of dilute nitride GaAsSbN on p-Si (111) substrates by self-catalyzed plasma-assisted molecular beam epitaxy. Patterned NW array with GaAsSbN of Sb composition of 3% as a stem provided the best yield of vertical NWs. Large bandgap tuning of ~ 75 meV, as ascertained from 4 K photoluminescence (PL), over a pitch length variation of 200–1200 nm has been demonstrated. Pitch-dependent axial and radial growth rates show a logistic sigmoidal growth trend different from those commonly observed in other patterned non-nitride III–V NWs. The sigmoidal fitting provides further insight into the PL spectral shift arising from differences in Sb and N incorporation from pitch induced variation in secondary fluxes. Results indicate that sigmoidal fitting can be a potent tool for designing patterned NW arrays of optimal pitch length for dilute nitrides and other highly mismatched alloys and heterostructures.