Study of patterned GaAsSbN nanowires using sigmoidal model

Abstract This study presents the first report on patterned nanowires (NWs) of dilute nitride GaAsSbN on p-Si (111) substrates by self-catalyzed plasma-assisted molecular beam epitaxy. Patterned NW array with GaAsSbN of Sb composition of 3% as a stem provided the best yield of vertical NWs. Large ban...

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Autores principales:	Sean Johnson, Rabin Pokharel, Michael Lowe, Hirandeep Kuchoor, Surya Nalamati, Klinton Davis, Hemali Rathnayake, Shanthi Iyer
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/f560db38523747f589ea4326819b7479
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id	oai:doaj.org-article:f560db38523747f589ea4326819b7479
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spelling	oai:doaj.org-article:f560db38523747f589ea4326819b74792021-12-02T11:35:58ZStudy of patterned GaAsSbN nanowires using sigmoidal model10.1038/s41598-021-83973-92045-2322https://doaj.org/article/f560db38523747f589ea4326819b74792021-02-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-83973-9https://doaj.org/toc/2045-2322Abstract This study presents the first report on patterned nanowires (NWs) of dilute nitride GaAsSbN on p-Si (111) substrates by self-catalyzed plasma-assisted molecular beam epitaxy. Patterned NW array with GaAsSbN of Sb composition of 3% as a stem provided the best yield of vertical NWs. Large bandgap tuning of ~ 75 meV, as ascertained from 4 K photoluminescence (PL), over a pitch length variation of 200–1200 nm has been demonstrated. Pitch-dependent axial and radial growth rates show a logistic sigmoidal growth trend different from those commonly observed in other patterned non-nitride III–V NWs. The sigmoidal fitting provides further insight into the PL spectral shift arising from differences in Sb and N incorporation from pitch induced variation in secondary fluxes. Results indicate that sigmoidal fitting can be a potent tool for designing patterned NW arrays of optimal pitch length for dilute nitrides and other highly mismatched alloys and heterostructures.Sean JohnsonRabin PokharelMichael LoweHirandeep KuchoorSurya NalamatiKlinton DavisHemali RathnayakeShanthi IyerNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-14 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Sean Johnson Rabin Pokharel Michael Lowe Hirandeep Kuchoor Surya Nalamati Klinton Davis Hemali Rathnayake Shanthi Iyer Study of patterned GaAsSbN nanowires using sigmoidal model
description	Abstract This study presents the first report on patterned nanowires (NWs) of dilute nitride GaAsSbN on p-Si (111) substrates by self-catalyzed plasma-assisted molecular beam epitaxy. Patterned NW array with GaAsSbN of Sb composition of 3% as a stem provided the best yield of vertical NWs. Large bandgap tuning of ~ 75 meV, as ascertained from 4 K photoluminescence (PL), over a pitch length variation of 200–1200 nm has been demonstrated. Pitch-dependent axial and radial growth rates show a logistic sigmoidal growth trend different from those commonly observed in other patterned non-nitride III–V NWs. The sigmoidal fitting provides further insight into the PL spectral shift arising from differences in Sb and N incorporation from pitch induced variation in secondary fluxes. Results indicate that sigmoidal fitting can be a potent tool for designing patterned NW arrays of optimal pitch length for dilute nitrides and other highly mismatched alloys and heterostructures.
format	article
author	Sean Johnson Rabin Pokharel Michael Lowe Hirandeep Kuchoor Surya Nalamati Klinton Davis Hemali Rathnayake Shanthi Iyer
author_facet	Sean Johnson Rabin Pokharel Michael Lowe Hirandeep Kuchoor Surya Nalamati Klinton Davis Hemali Rathnayake Shanthi Iyer
author_sort	Sean Johnson
title	Study of patterned GaAsSbN nanowires using sigmoidal model
title_short	Study of patterned GaAsSbN nanowires using sigmoidal model
title_full	Study of patterned GaAsSbN nanowires using sigmoidal model
title_fullStr	Study of patterned GaAsSbN nanowires using sigmoidal model
title_full_unstemmed	Study of patterned GaAsSbN nanowires using sigmoidal model
title_sort	study of patterned gaassbn nanowires using sigmoidal model
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/f560db38523747f589ea4326819b7479
work_keys_str_mv	AT seanjohnson studyofpatternedgaassbnnanowiresusingsigmoidalmodel AT rabinpokharel studyofpatternedgaassbnnanowiresusingsigmoidalmodel AT michaellowe studyofpatternedgaassbnnanowiresusingsigmoidalmodel AT hirandeepkuchoor studyofpatternedgaassbnnanowiresusingsigmoidalmodel AT suryanalamati studyofpatternedgaassbnnanowiresusingsigmoidalmodel AT klintondavis studyofpatternedgaassbnnanowiresusingsigmoidalmodel AT hemalirathnayake studyofpatternedgaassbnnanowiresusingsigmoidalmodel AT shanthiiyer studyofpatternedgaassbnnanowiresusingsigmoidalmodel
_version_	1718395856633200640

Study of patterned GaAsSbN nanowires using sigmoidal model

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