Observation of negative capacitance in antiferroelectric PbZrO3 Films
The observation of negative capacitance effect is focused on the ferroelectrics, while the antiferroelectrics based on Landau switches may have negative capacitance effect. Here, the authors report the static and transient negative capacitance effect in antiferroelectric PbZrO3 and reveal its origin...
Enregistré dans:
Auteurs principaux: | Leilei Qiao, Cheng Song, Yiming Sun, Muhammad Umer Fayaz, Tianqi Lu, Siqi Yin, Chong Chen, Huiping Xu, Tian-Ling Ren, Feng Pan |
---|---|
Format: | article |
Langue: | EN |
Publié: |
Nature Portfolio
2021
|
Sujets: | |
Accès en ligne: | https://doaj.org/article/f5daf3e56731454a9f67f91dbbc3b5f0 |
Tags: |
Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!
|
Documents similaires
-
Unveiling the ferrielectric nature of PbZrO3-based antiferroelectric materials
par: Zhengqian Fu, et autres
Publié: (2020) -
Direct growth of orthorhombic Hf0.5Zr0.5O2 thin films for hysteresis-free MoS2 negative capacitance field-effect transistors
par: Hae Won Cho, et autres
Publié: (2021) -
Ultrasensitive negative capacitance phototransistors
par: Luqi Tu, et autres
Publié: (2020) -
Designing lead-free antiferroelectrics for energy storage
par: Bin Xu, et autres
Publié: (2017) -
Author Correction: Direct growth of orthorhombic Hf0.5Zr0.5O2 thin films for hysteresis-free MoS2 negative capacitance field-effect transistors
par: Hae Won Cho, et autres
Publié: (2021)