A non-volatile cryogenic random-access memory based on the quantum anomalous Hall effect

Abstract The interplay between ferromagnetism and topological properties of electronic band structures leads to a precise quantization of Hall resistance without any external magnetic field. This so-called quantum anomalous Hall effect (QAHE) is born out of topological correlations, and is oblivious...

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Autores principales:	Shamiul Alam, Md Shafayat Hossain, Ahmedullah Aziz
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/f5e4a35ce4d248899aa999268f706b44
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spelling	oai:doaj.org-article:f5e4a35ce4d248899aa999268f706b442021-12-02T18:02:47ZA non-volatile cryogenic random-access memory based on the quantum anomalous Hall effect10.1038/s41598-021-87056-72045-2322https://doaj.org/article/f5e4a35ce4d248899aa999268f706b442021-04-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-87056-7https://doaj.org/toc/2045-2322Abstract The interplay between ferromagnetism and topological properties of electronic band structures leads to a precise quantization of Hall resistance without any external magnetic field. This so-called quantum anomalous Hall effect (QAHE) is born out of topological correlations, and is oblivious of low-sample quality. It was envisioned to lead towards dissipation-less and topologically protected electronics. However, no clear framework of how to design such an electronic device out of it exists. Here we construct an ultra-low power, non-volatile, cryogenic memory architecture leveraging the QAHE phenomenon. Our design promises orders of magnitude lower cell area compared with the state-of-the-art cryogenic memory technologies. We harness the fundamentally quantized Hall resistance levels in moiré graphene heterostructures to store non-volatile binary bits (1, 0). We perform the memory write operation through controlled hysteretic switching between the quantized Hall states, using nano-ampere level currents with opposite polarities. The non-destructive read operation is performed by sensing the polarity of the transverse Hall voltage using a separate pair of terminals. We custom design the memory architecture with a novel sensing mechanism to avoid accidental data corruption, ensure highest memory density and minimize array leakage power. Our design provides a pathway towards realizing topologically protected memory devices.Shamiul AlamMd Shafayat HossainAhmedullah AzizNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-9 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Shamiul Alam Md Shafayat Hossain Ahmedullah Aziz A non-volatile cryogenic random-access memory based on the quantum anomalous Hall effect
description	Abstract The interplay between ferromagnetism and topological properties of electronic band structures leads to a precise quantization of Hall resistance without any external magnetic field. This so-called quantum anomalous Hall effect (QAHE) is born out of topological correlations, and is oblivious of low-sample quality. It was envisioned to lead towards dissipation-less and topologically protected electronics. However, no clear framework of how to design such an electronic device out of it exists. Here we construct an ultra-low power, non-volatile, cryogenic memory architecture leveraging the QAHE phenomenon. Our design promises orders of magnitude lower cell area compared with the state-of-the-art cryogenic memory technologies. We harness the fundamentally quantized Hall resistance levels in moiré graphene heterostructures to store non-volatile binary bits (1, 0). We perform the memory write operation through controlled hysteretic switching between the quantized Hall states, using nano-ampere level currents with opposite polarities. The non-destructive read operation is performed by sensing the polarity of the transverse Hall voltage using a separate pair of terminals. We custom design the memory architecture with a novel sensing mechanism to avoid accidental data corruption, ensure highest memory density and minimize array leakage power. Our design provides a pathway towards realizing topologically protected memory devices.
format	article
author	Shamiul Alam Md Shafayat Hossain Ahmedullah Aziz
author_facet	Shamiul Alam Md Shafayat Hossain Ahmedullah Aziz
author_sort	Shamiul Alam
title	A non-volatile cryogenic random-access memory based on the quantum anomalous Hall effect
title_short	A non-volatile cryogenic random-access memory based on the quantum anomalous Hall effect
title_full	A non-volatile cryogenic random-access memory based on the quantum anomalous Hall effect
title_fullStr	A non-volatile cryogenic random-access memory based on the quantum anomalous Hall effect
title_full_unstemmed	A non-volatile cryogenic random-access memory based on the quantum anomalous Hall effect
title_sort	non-volatile cryogenic random-access memory based on the quantum anomalous hall effect
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/f5e4a35ce4d248899aa999268f706b44
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A non-volatile cryogenic random-access memory based on the quantum anomalous Hall effect

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