Characteristic modeling of a diode detector based on a semiconductor(BiSb) /superconductor (NbN) heterojunction with surface states

Diode detectors (DDs) are widely used in electronic information and communication systems. In this study, a numerical modeling of the electric potential distribution and current passing in contacts of niobium nitride (NbN) with a bismuth-antimony (Bi-Sb) semiconductor alloy was performed. Earlier, w...

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Autor principal:	Cherner, Iacov
Formato:	article
Lenguaje:	EN
Publicado:	D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2012
Materias:	Physics QC1-999 Electronics TK7800-8360
Acceso en línea:	https://doaj.org/article/f6073e606241443dae8b526f4a8ea146
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spelling	oai:doaj.org-article:f6073e606241443dae8b526f4a8ea1462021-11-21T12:01:38ZCharacteristic modeling of a diode detector based on a semiconductor(BiSb) /superconductor (NbN) heterojunction with surface states2537-63651810-648Xhttps://doaj.org/article/f6073e606241443dae8b526f4a8ea1462012-01-01T00:00:00Zhttps://mjps.nanotech.md/archive/2012/article/18994https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365Diode detectors (DDs) are widely used in electronic information and communication systems. In this study, a numerical modeling of the electric potential distribution and current passing in contacts of niobium nitride (NbN) with a bismuth-antimony (Bi-Sb) semiconductor alloy was performed. Earlier, we have studied the case in which the surface states were in thermodynamic equilibrium with a semiconductor. In this article, an opposite situation is studied, when the surface states are in thermodynamic equilibrium with a superconductor. The possibility to design diode detectors based on these contacts that operate at temperatures (T) of liquid helium 4.2 K and 1 K is explored. The dependences of current responsivity (CR), voltage responsivity (VR), and noise equivalent power (NEP) on signal frequency (f) are analyzed. The obtained results are compared with literature data. DDs operating at the temperature of liquid nitrogen (T = 77.4 K) and liquid helium are considered. A comparison with the available literature data shows that the proposed DDs can be 10÷100 times better. The physical reasons of these advantages are discussed. It is shown that unique properties of Bi-Sb alloys and especially of Bi0.88Sb0.12 alloy make these alloys very promising materials for cryoelectronics.Cherner, IacovD.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 11, Iss 1-2, Pp 52-57 (2012)
institution	DOAJ
collection	DOAJ
language	EN
topic	Physics QC1-999 Electronics TK7800-8360
spellingShingle	Physics QC1-999 Electronics TK7800-8360 Cherner, Iacov Characteristic modeling of a diode detector based on a semiconductor(BiSb) /superconductor (NbN) heterojunction with surface states
description	Diode detectors (DDs) are widely used in electronic information and communication systems. In this study, a numerical modeling of the electric potential distribution and current passing in contacts of niobium nitride (NbN) with a bismuth-antimony (Bi-Sb) semiconductor alloy was performed. Earlier, we have studied the case in which the surface states were in thermodynamic equilibrium with a semiconductor. In this article, an opposite situation is studied, when the surface states are in thermodynamic equilibrium with a superconductor. The possibility to design diode detectors based on these contacts that operate at temperatures (T) of liquid helium 4.2 K and 1 K is explored. The dependences of current responsivity (CR), voltage responsivity (VR), and noise equivalent power (NEP) on signal frequency (f) are analyzed. The obtained results are compared with literature data. DDs operating at the temperature of liquid nitrogen (T = 77.4 K) and liquid helium are considered. A comparison with the available literature data shows that the proposed DDs can be 10÷100 times better. The physical reasons of these advantages are discussed. It is shown that unique properties of Bi-Sb alloys and especially of Bi0.88Sb0.12 alloy make these alloys very promising materials for cryoelectronics.
format	article
author	Cherner, Iacov
author_facet	Cherner, Iacov
author_sort	Cherner, Iacov
title	Characteristic modeling of a diode detector based on a semiconductor(BiSb) /superconductor (NbN) heterojunction with surface states
title_short	Characteristic modeling of a diode detector based on a semiconductor(BiSb) /superconductor (NbN) heterojunction with surface states
title_full	Characteristic modeling of a diode detector based on a semiconductor(BiSb) /superconductor (NbN) heterojunction with surface states
title_fullStr	Characteristic modeling of a diode detector based on a semiconductor(BiSb) /superconductor (NbN) heterojunction with surface states
title_full_unstemmed	Characteristic modeling of a diode detector based on a semiconductor(BiSb) /superconductor (NbN) heterojunction with surface states
title_sort	characteristic modeling of a diode detector based on a semiconductor(bisb) /superconductor (nbn) heterojunction with surface states
publisher	D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate	2012
url	https://doaj.org/article/f6073e606241443dae8b526f4a8ea146
work_keys_str_mv	AT cherneriacov characteristicmodelingofadiodedetectorbasedonasemiconductorbisbsuperconductornbnheterojunctionwithsurfacestates
_version_	1718419340421758976

Characteristic modeling of a diode detector based on a semiconductor(BiSb) /superconductor (NbN) heterojunction with surface states

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