Characteristic modeling of a diode detector based on a semiconductor(BiSb) /superconductor (NbN) heterojunction with surface states
Diode detectors (DDs) are widely used in electronic information and communication systems. In this study, a numerical modeling of the electric potential distribution and current passing in contacts of niobium nitride (NbN) with a bismuth-antimony (Bi-Sb) semiconductor alloy was performed. Earlier, w...
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| Formato: | article |
| Lenguaje: | EN |
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D.Ghitu Institute of Electronic Engineering and Nanotechnologies
2012
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| Acceso en línea: | https://doaj.org/article/f6073e606241443dae8b526f4a8ea146 |
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