Metal-to-insulator transition in Pt-doped TiSe2 driven by emergent network of narrow transport channels

Abstract Metal-to-insulator transitions (MIT) can be driven by a number of different mechanisms, each resulting in a different type of insulator—Change in chemical potential can induce a transition from a metal to a band insulator; strong correlations can drive a metal into a Mott insulator with an...

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Autores principales: Kyungmin Lee, Jesse Choe, Davide Iaia, Juqiang Li, Junjing Zhao, Ming Shi, Junzhang Ma, Mengyu Yao, Zhenyu Wang, Chien-Lung Huang, Masayuki Ochi, Ryotaro Arita, Utpal Chatterjee, Emilia Morosan, Vidya Madhavan, Nandini Trivedi
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Publicado: Nature Portfolio 2021
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spelling oai:doaj.org-article:f6348eef70a340e499dabdd144f0a3322021-12-02T14:26:33ZMetal-to-insulator transition in Pt-doped TiSe2 driven by emergent network of narrow transport channels10.1038/s41535-020-00305-22397-4648https://doaj.org/article/f6348eef70a340e499dabdd144f0a3322021-01-01T00:00:00Zhttps://doi.org/10.1038/s41535-020-00305-2https://doaj.org/toc/2397-4648Abstract Metal-to-insulator transitions (MIT) can be driven by a number of different mechanisms, each resulting in a different type of insulator—Change in chemical potential can induce a transition from a metal to a band insulator; strong correlations can drive a metal into a Mott insulator with an energy gap; an Anderson transition, on the other hand, due to disorder leads to a localized insulator without a gap in the spectrum. Here, we report the discovery of an alternative route for MIT driven by the creation of a network of narrow channels. Transport data on Pt substituted for Ti in 1T-TiSe2 shows a dramatic increase of resistivity by five orders of magnitude for few % of Pt substitution, with a power-law dependence of the temperature-dependent resistivity ρ(T). Our scanning tunneling microscopy data show that Pt induces an irregular network of nanometer-thick domain walls (DWs) of charge density wave (CDW) order, which pull charge carriers out of the bulk and into the DWs. While the CDW domains are gapped, the charges confined to the narrow DWs interact strongly, with pseudogap-like suppression in the local density of states, even when they were weakly interacting in the bulk, and scatter at the DW network interconnects thereby generating the highly resistive state. Angle-resolved photoemission spectroscopy spectra exhibit pseudogap behavior corroborating the spatial coexistence of gapped domains and narrow domain walls with excess charge carriers.Kyungmin LeeJesse ChoeDavide IaiaJuqiang LiJunjing ZhaoMing ShiJunzhang MaMengyu YaoZhenyu WangChien-Lung HuangMasayuki OchiRyotaro AritaUtpal ChatterjeeEmilia MorosanVidya MadhavanNandini TrivediNature PortfolioarticleMaterials of engineering and construction. Mechanics of materialsTA401-492Atomic physics. Constitution and properties of matterQC170-197ENnpj Quantum Materials, Vol 6, Iss 1, Pp 1-8 (2021)
institution DOAJ
collection DOAJ
language EN
topic Materials of engineering and construction. Mechanics of materials
TA401-492
Atomic physics. Constitution and properties of matter
QC170-197
spellingShingle Materials of engineering and construction. Mechanics of materials
TA401-492
Atomic physics. Constitution and properties of matter
QC170-197
Kyungmin Lee
Jesse Choe
Davide Iaia
Juqiang Li
Junjing Zhao
Ming Shi
Junzhang Ma
Mengyu Yao
Zhenyu Wang
Chien-Lung Huang
Masayuki Ochi
Ryotaro Arita
Utpal Chatterjee
Emilia Morosan
Vidya Madhavan
Nandini Trivedi
Metal-to-insulator transition in Pt-doped TiSe2 driven by emergent network of narrow transport channels
description Abstract Metal-to-insulator transitions (MIT) can be driven by a number of different mechanisms, each resulting in a different type of insulator—Change in chemical potential can induce a transition from a metal to a band insulator; strong correlations can drive a metal into a Mott insulator with an energy gap; an Anderson transition, on the other hand, due to disorder leads to a localized insulator without a gap in the spectrum. Here, we report the discovery of an alternative route for MIT driven by the creation of a network of narrow channels. Transport data on Pt substituted for Ti in 1T-TiSe2 shows a dramatic increase of resistivity by five orders of magnitude for few % of Pt substitution, with a power-law dependence of the temperature-dependent resistivity ρ(T). Our scanning tunneling microscopy data show that Pt induces an irregular network of nanometer-thick domain walls (DWs) of charge density wave (CDW) order, which pull charge carriers out of the bulk and into the DWs. While the CDW domains are gapped, the charges confined to the narrow DWs interact strongly, with pseudogap-like suppression in the local density of states, even when they were weakly interacting in the bulk, and scatter at the DW network interconnects thereby generating the highly resistive state. Angle-resolved photoemission spectroscopy spectra exhibit pseudogap behavior corroborating the spatial coexistence of gapped domains and narrow domain walls with excess charge carriers.
format article
author Kyungmin Lee
Jesse Choe
Davide Iaia
Juqiang Li
Junjing Zhao
Ming Shi
Junzhang Ma
Mengyu Yao
Zhenyu Wang
Chien-Lung Huang
Masayuki Ochi
Ryotaro Arita
Utpal Chatterjee
Emilia Morosan
Vidya Madhavan
Nandini Trivedi
author_facet Kyungmin Lee
Jesse Choe
Davide Iaia
Juqiang Li
Junjing Zhao
Ming Shi
Junzhang Ma
Mengyu Yao
Zhenyu Wang
Chien-Lung Huang
Masayuki Ochi
Ryotaro Arita
Utpal Chatterjee
Emilia Morosan
Vidya Madhavan
Nandini Trivedi
author_sort Kyungmin Lee
title Metal-to-insulator transition in Pt-doped TiSe2 driven by emergent network of narrow transport channels
title_short Metal-to-insulator transition in Pt-doped TiSe2 driven by emergent network of narrow transport channels
title_full Metal-to-insulator transition in Pt-doped TiSe2 driven by emergent network of narrow transport channels
title_fullStr Metal-to-insulator transition in Pt-doped TiSe2 driven by emergent network of narrow transport channels
title_full_unstemmed Metal-to-insulator transition in Pt-doped TiSe2 driven by emergent network of narrow transport channels
title_sort metal-to-insulator transition in pt-doped tise2 driven by emergent network of narrow transport channels
publisher Nature Portfolio
publishDate 2021
url https://doaj.org/article/f6348eef70a340e499dabdd144f0a332
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