Metal-to-insulator transition in Pt-doped TiSe2 driven by emergent network of narrow transport channels
Abstract Metal-to-insulator transitions (MIT) can be driven by a number of different mechanisms, each resulting in a different type of insulator—Change in chemical potential can induce a transition from a metal to a band insulator; strong correlations can drive a metal into a Mott insulator with an...
Guardado en:
Autores principales: | , , , , , , , , , , , , , , , |
---|---|
Formato: | article |
Lenguaje: | EN |
Publicado: |
Nature Portfolio
2021
|
Materias: | |
Acceso en línea: | https://doaj.org/article/f6348eef70a340e499dabdd144f0a332 |
Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
id |
oai:doaj.org-article:f6348eef70a340e499dabdd144f0a332 |
---|---|
record_format |
dspace |
spelling |
oai:doaj.org-article:f6348eef70a340e499dabdd144f0a3322021-12-02T14:26:33ZMetal-to-insulator transition in Pt-doped TiSe2 driven by emergent network of narrow transport channels10.1038/s41535-020-00305-22397-4648https://doaj.org/article/f6348eef70a340e499dabdd144f0a3322021-01-01T00:00:00Zhttps://doi.org/10.1038/s41535-020-00305-2https://doaj.org/toc/2397-4648Abstract Metal-to-insulator transitions (MIT) can be driven by a number of different mechanisms, each resulting in a different type of insulator—Change in chemical potential can induce a transition from a metal to a band insulator; strong correlations can drive a metal into a Mott insulator with an energy gap; an Anderson transition, on the other hand, due to disorder leads to a localized insulator without a gap in the spectrum. Here, we report the discovery of an alternative route for MIT driven by the creation of a network of narrow channels. Transport data on Pt substituted for Ti in 1T-TiSe2 shows a dramatic increase of resistivity by five orders of magnitude for few % of Pt substitution, with a power-law dependence of the temperature-dependent resistivity ρ(T). Our scanning tunneling microscopy data show that Pt induces an irregular network of nanometer-thick domain walls (DWs) of charge density wave (CDW) order, which pull charge carriers out of the bulk and into the DWs. While the CDW domains are gapped, the charges confined to the narrow DWs interact strongly, with pseudogap-like suppression in the local density of states, even when they were weakly interacting in the bulk, and scatter at the DW network interconnects thereby generating the highly resistive state. Angle-resolved photoemission spectroscopy spectra exhibit pseudogap behavior corroborating the spatial coexistence of gapped domains and narrow domain walls with excess charge carriers.Kyungmin LeeJesse ChoeDavide IaiaJuqiang LiJunjing ZhaoMing ShiJunzhang MaMengyu YaoZhenyu WangChien-Lung HuangMasayuki OchiRyotaro AritaUtpal ChatterjeeEmilia MorosanVidya MadhavanNandini TrivediNature PortfolioarticleMaterials of engineering and construction. Mechanics of materialsTA401-492Atomic physics. Constitution and properties of matterQC170-197ENnpj Quantum Materials, Vol 6, Iss 1, Pp 1-8 (2021) |
institution |
DOAJ |
collection |
DOAJ |
language |
EN |
topic |
Materials of engineering and construction. Mechanics of materials TA401-492 Atomic physics. Constitution and properties of matter QC170-197 |
spellingShingle |
Materials of engineering and construction. Mechanics of materials TA401-492 Atomic physics. Constitution and properties of matter QC170-197 Kyungmin Lee Jesse Choe Davide Iaia Juqiang Li Junjing Zhao Ming Shi Junzhang Ma Mengyu Yao Zhenyu Wang Chien-Lung Huang Masayuki Ochi Ryotaro Arita Utpal Chatterjee Emilia Morosan Vidya Madhavan Nandini Trivedi Metal-to-insulator transition in Pt-doped TiSe2 driven by emergent network of narrow transport channels |
description |
Abstract Metal-to-insulator transitions (MIT) can be driven by a number of different mechanisms, each resulting in a different type of insulator—Change in chemical potential can induce a transition from a metal to a band insulator; strong correlations can drive a metal into a Mott insulator with an energy gap; an Anderson transition, on the other hand, due to disorder leads to a localized insulator without a gap in the spectrum. Here, we report the discovery of an alternative route for MIT driven by the creation of a network of narrow channels. Transport data on Pt substituted for Ti in 1T-TiSe2 shows a dramatic increase of resistivity by five orders of magnitude for few % of Pt substitution, with a power-law dependence of the temperature-dependent resistivity ρ(T). Our scanning tunneling microscopy data show that Pt induces an irregular network of nanometer-thick domain walls (DWs) of charge density wave (CDW) order, which pull charge carriers out of the bulk and into the DWs. While the CDW domains are gapped, the charges confined to the narrow DWs interact strongly, with pseudogap-like suppression in the local density of states, even when they were weakly interacting in the bulk, and scatter at the DW network interconnects thereby generating the highly resistive state. Angle-resolved photoemission spectroscopy spectra exhibit pseudogap behavior corroborating the spatial coexistence of gapped domains and narrow domain walls with excess charge carriers. |
format |
article |
author |
Kyungmin Lee Jesse Choe Davide Iaia Juqiang Li Junjing Zhao Ming Shi Junzhang Ma Mengyu Yao Zhenyu Wang Chien-Lung Huang Masayuki Ochi Ryotaro Arita Utpal Chatterjee Emilia Morosan Vidya Madhavan Nandini Trivedi |
author_facet |
Kyungmin Lee Jesse Choe Davide Iaia Juqiang Li Junjing Zhao Ming Shi Junzhang Ma Mengyu Yao Zhenyu Wang Chien-Lung Huang Masayuki Ochi Ryotaro Arita Utpal Chatterjee Emilia Morosan Vidya Madhavan Nandini Trivedi |
author_sort |
Kyungmin Lee |
title |
Metal-to-insulator transition in Pt-doped TiSe2 driven by emergent network of narrow transport channels |
title_short |
Metal-to-insulator transition in Pt-doped TiSe2 driven by emergent network of narrow transport channels |
title_full |
Metal-to-insulator transition in Pt-doped TiSe2 driven by emergent network of narrow transport channels |
title_fullStr |
Metal-to-insulator transition in Pt-doped TiSe2 driven by emergent network of narrow transport channels |
title_full_unstemmed |
Metal-to-insulator transition in Pt-doped TiSe2 driven by emergent network of narrow transport channels |
title_sort |
metal-to-insulator transition in pt-doped tise2 driven by emergent network of narrow transport channels |
publisher |
Nature Portfolio |
publishDate |
2021 |
url |
https://doaj.org/article/f6348eef70a340e499dabdd144f0a332 |
work_keys_str_mv |
AT kyungminlee metaltoinsulatortransitioninptdopedtise2drivenbyemergentnetworkofnarrowtransportchannels AT jessechoe metaltoinsulatortransitioninptdopedtise2drivenbyemergentnetworkofnarrowtransportchannels AT davideiaia metaltoinsulatortransitioninptdopedtise2drivenbyemergentnetworkofnarrowtransportchannels AT juqiangli metaltoinsulatortransitioninptdopedtise2drivenbyemergentnetworkofnarrowtransportchannels AT junjingzhao metaltoinsulatortransitioninptdopedtise2drivenbyemergentnetworkofnarrowtransportchannels AT mingshi metaltoinsulatortransitioninptdopedtise2drivenbyemergentnetworkofnarrowtransportchannels AT junzhangma metaltoinsulatortransitioninptdopedtise2drivenbyemergentnetworkofnarrowtransportchannels AT mengyuyao metaltoinsulatortransitioninptdopedtise2drivenbyemergentnetworkofnarrowtransportchannels AT zhenyuwang metaltoinsulatortransitioninptdopedtise2drivenbyemergentnetworkofnarrowtransportchannels AT chienlunghuang metaltoinsulatortransitioninptdopedtise2drivenbyemergentnetworkofnarrowtransportchannels AT masayukiochi metaltoinsulatortransitioninptdopedtise2drivenbyemergentnetworkofnarrowtransportchannels AT ryotaroarita metaltoinsulatortransitioninptdopedtise2drivenbyemergentnetworkofnarrowtransportchannels AT utpalchatterjee metaltoinsulatortransitioninptdopedtise2drivenbyemergentnetworkofnarrowtransportchannels AT emiliamorosan metaltoinsulatortransitioninptdopedtise2drivenbyemergentnetworkofnarrowtransportchannels AT vidyamadhavan metaltoinsulatortransitioninptdopedtise2drivenbyemergentnetworkofnarrowtransportchannels AT nandinitrivedi metaltoinsulatortransitioninptdopedtise2drivenbyemergentnetworkofnarrowtransportchannels |
_version_ |
1718391346060853248 |