Selective etching of 10 MHz repetition rate fs-laser inscribed tracks in YAG
We investigated fs-laser structuring of YAG crystals at high writing velocities up to 100 mm/s using a commercial 10 MHz fs-laser system supplied by Coherent Inc. and selective etching of these structures for fabrication of ultrahigh aspect ratio microchannels. Usage of a diluted acid mixture of 22%...
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| Auteurs principaux: | , , |
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| Format: | article |
| Langue: | EN |
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EDP Sciences
2021
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| Accès en ligne: | https://doaj.org/article/f67cc3a1209e49ce9e2888c6581c73a5 |
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| Résumé: | We investigated fs-laser structuring of YAG crystals at high writing velocities up to 100 mm/s using a commercial 10 MHz fs-laser system supplied by Coherent Inc. and selective etching of these structures for fabrication of ultrahigh aspect ratio microchannels. Usage of a diluted acid mixture of 22% H3PO4 and 24% H2SO4 accelerated the etching process significantly to an etching parameter D of 11.2 μm2/s, which is three times higher than previously reported. Additionally, the selectivity of the etching process was increased by an order of magnitude. |
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