Selective etching of 10 MHz repetition rate fs-laser inscribed tracks in YAG

We investigated fs-laser structuring of YAG crystals at high writing velocities up to 100 mm/s using a commercial 10 MHz fs-laser system supplied by Coherent Inc. and selective etching of these structures for fabrication of ultrahigh aspect ratio microchannels. Usage of a diluted acid mixture of 22%...

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Autores principales:	Hasse Kore, Kip Detlef, Kränkel Christian
Formato:	article
Lenguaje:	EN
Publicado:	EDP Sciences 2021
Materias:	Physics QC1-999
Acceso en línea:	https://doaj.org/article/f67cc3a1209e49ce9e2888c6581c73a5
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spelling	oai:doaj.org-article:f67cc3a1209e49ce9e2888c6581c73a52021-12-02T17:12:51ZSelective etching of 10 MHz repetition rate fs-laser inscribed tracks in YAG2100-014X10.1051/epjconf/202125510003https://doaj.org/article/f67cc3a1209e49ce9e2888c6581c73a52021-01-01T00:00:00Zhttps://www.epj-conferences.org/articles/epjconf/pdf/2021/09/epjconf_eosam2021_10003.pdfhttps://doaj.org/toc/2100-014XWe investigated fs-laser structuring of YAG crystals at high writing velocities up to 100 mm/s using a commercial 10 MHz fs-laser system supplied by Coherent Inc. and selective etching of these structures for fabrication of ultrahigh aspect ratio microchannels. Usage of a diluted acid mixture of 22% H3PO4 and 24% H2SO4 accelerated the etching process significantly to an etching parameter D of 11.2 μm2/s, which is three times higher than previously reported. Additionally, the selectivity of the etching process was increased by an order of magnitude.Hasse KoreKip DetlefKränkel ChristianEDP SciencesarticlePhysicsQC1-999ENEPJ Web of Conferences, Vol 255, p 10003 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Physics QC1-999
spellingShingle	Physics QC1-999 Hasse Kore Kip Detlef Kränkel Christian Selective etching of 10 MHz repetition rate fs-laser inscribed tracks in YAG
description	We investigated fs-laser structuring of YAG crystals at high writing velocities up to 100 mm/s using a commercial 10 MHz fs-laser system supplied by Coherent Inc. and selective etching of these structures for fabrication of ultrahigh aspect ratio microchannels. Usage of a diluted acid mixture of 22% H3PO4 and 24% H2SO4 accelerated the etching process significantly to an etching parameter D of 11.2 μm2/s, which is three times higher than previously reported. Additionally, the selectivity of the etching process was increased by an order of magnitude.
format	article
author	Hasse Kore Kip Detlef Kränkel Christian
author_facet	Hasse Kore Kip Detlef Kränkel Christian
author_sort	Hasse Kore
title	Selective etching of 10 MHz repetition rate fs-laser inscribed tracks in YAG
title_short	Selective etching of 10 MHz repetition rate fs-laser inscribed tracks in YAG
title_full	Selective etching of 10 MHz repetition rate fs-laser inscribed tracks in YAG
title_fullStr	Selective etching of 10 MHz repetition rate fs-laser inscribed tracks in YAG
title_full_unstemmed	Selective etching of 10 MHz repetition rate fs-laser inscribed tracks in YAG
title_sort	selective etching of 10 mhz repetition rate fs-laser inscribed tracks in yag
publisher	EDP Sciences
publishDate	2021
url	https://doaj.org/article/f67cc3a1209e49ce9e2888c6581c73a5
work_keys_str_mv	AT hassekore selectiveetchingof10mhzrepetitionratefslaserinscribedtracksinyag AT kipdetlef selectiveetchingof10mhzrepetitionratefslaserinscribedtracksinyag AT krankelchristian selectiveetchingof10mhzrepetitionratefslaserinscribedtracksinyag
_version_	1718381416035647488

Selective etching of 10 MHz repetition rate fs-laser inscribed tracks in YAG

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