A 6.89-MHz 143-nW MEMS Oscillator Based on a 118-dBΩ Tunable Gain and Duty-Cycle CMOS TIA
This article presents a 6.89 MHz MEMS oscillator based on an ultra-low-power, low-noise, tunable gain/duty-cycle transimpedance amplifier (TIA) and a bulk Lamé-mode MEMS resonator that has a quality factor (<i>Q</i>) of 3.24 × 10<sup>6</sup>. Self-cascoding and current-starvi...
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MDPI AG
2021
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oai:doaj.org-article:f6ccfa4468c94ac79dfd75a6c6f9412e2021-11-11T15:39:11ZA 6.89-MHz 143-nW MEMS Oscillator Based on a 118-dBΩ Tunable Gain and Duty-Cycle CMOS TIA10.3390/electronics102126462079-9292https://doaj.org/article/f6ccfa4468c94ac79dfd75a6c6f9412e2021-10-01T00:00:00Zhttps://www.mdpi.com/2079-9292/10/21/2646https://doaj.org/toc/2079-9292This article presents a 6.89 MHz MEMS oscillator based on an ultra-low-power, low-noise, tunable gain/duty-cycle transimpedance amplifier (TIA) and a bulk Lamé-mode MEMS resonator that has a quality factor (<i>Q</i>) of 3.24 × 10<sup>6</sup>. Self-cascoding and current-starving techniques are used in the TIA design to minimize the power consumption and tune the duty-cycle of the output signal. The TIA was designed and fabricated in TSMC 65 nm CMOS process technology. Its open-loop performance has been measured separately. It achieves a tunable gain between 107.9 dBΩ and 118.1 dBΩ while dissipating only 143 nW from a 1 V supply. The duty-cycle of the output waveform can be tuned from 23.25% to 79.03%. The TIA has been interfaced and wire bonded in a series-resonant oscillator configuration with the MEMS resonator and mounted in a small cavity standard package. The closed-loop performance of the whole oscillator has been experimentally measured. It exhibits a phase noise of −128.1 dBc/Hz and −133.7 dBc/Hz at 1 kHz and 1 MHz offsets, respectively.Ahmed KiraMohannad Y. ElsayedKarim AllidinaVamsy P. ChodavarapuMourad N. El-GamalMDPI AGarticleoscillatortransimpedance amplifier (TIA)microelectromechanical systems (MEMS)bandwidth trade-offduty-cyclelow-noiseElectronicsTK7800-8360ENElectronics, Vol 10, Iss 2646, p 2646 (2021) |
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DOAJ |
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EN |
| topic |
oscillator transimpedance amplifier (TIA) microelectromechanical systems (MEMS) bandwidth trade-off duty-cycle low-noise Electronics TK7800-8360 |
| spellingShingle |
oscillator transimpedance amplifier (TIA) microelectromechanical systems (MEMS) bandwidth trade-off duty-cycle low-noise Electronics TK7800-8360 Ahmed Kira Mohannad Y. Elsayed Karim Allidina Vamsy P. Chodavarapu Mourad N. El-Gamal A 6.89-MHz 143-nW MEMS Oscillator Based on a 118-dBΩ Tunable Gain and Duty-Cycle CMOS TIA |
| description |
This article presents a 6.89 MHz MEMS oscillator based on an ultra-low-power, low-noise, tunable gain/duty-cycle transimpedance amplifier (TIA) and a bulk Lamé-mode MEMS resonator that has a quality factor (<i>Q</i>) of 3.24 × 10<sup>6</sup>. Self-cascoding and current-starving techniques are used in the TIA design to minimize the power consumption and tune the duty-cycle of the output signal. The TIA was designed and fabricated in TSMC 65 nm CMOS process technology. Its open-loop performance has been measured separately. It achieves a tunable gain between 107.9 dBΩ and 118.1 dBΩ while dissipating only 143 nW from a 1 V supply. The duty-cycle of the output waveform can be tuned from 23.25% to 79.03%. The TIA has been interfaced and wire bonded in a series-resonant oscillator configuration with the MEMS resonator and mounted in a small cavity standard package. The closed-loop performance of the whole oscillator has been experimentally measured. It exhibits a phase noise of −128.1 dBc/Hz and −133.7 dBc/Hz at 1 kHz and 1 MHz offsets, respectively. |
| format |
article |
| author |
Ahmed Kira Mohannad Y. Elsayed Karim Allidina Vamsy P. Chodavarapu Mourad N. El-Gamal |
| author_facet |
Ahmed Kira Mohannad Y. Elsayed Karim Allidina Vamsy P. Chodavarapu Mourad N. El-Gamal |
| author_sort |
Ahmed Kira |
| title |
A 6.89-MHz 143-nW MEMS Oscillator Based on a 118-dBΩ Tunable Gain and Duty-Cycle CMOS TIA |
| title_short |
A 6.89-MHz 143-nW MEMS Oscillator Based on a 118-dBΩ Tunable Gain and Duty-Cycle CMOS TIA |
| title_full |
A 6.89-MHz 143-nW MEMS Oscillator Based on a 118-dBΩ Tunable Gain and Duty-Cycle CMOS TIA |
| title_fullStr |
A 6.89-MHz 143-nW MEMS Oscillator Based on a 118-dBΩ Tunable Gain and Duty-Cycle CMOS TIA |
| title_full_unstemmed |
A 6.89-MHz 143-nW MEMS Oscillator Based on a 118-dBΩ Tunable Gain and Duty-Cycle CMOS TIA |
| title_sort |
6.89-mhz 143-nw mems oscillator based on a 118-dbω tunable gain and duty-cycle cmos tia |
| publisher |
MDPI AG |
| publishDate |
2021 |
| url |
https://doaj.org/article/f6ccfa4468c94ac79dfd75a6c6f9412e |
| work_keys_str_mv |
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