Plasmonic hot electron induced layer dependent anomalous Fröhlich interaction in InSe

Electron-phonon coupling plays a central role in a variety of low dimensional structures. The authors unveiled the subtle interaction between optical phonons and charge carriers by applying Raman spectroscopy to plasmonic nanostructures fabricated on atomically thin InSe. These findings provide insi...

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Autores principales:	Mahfujur Rahaman, Muhammad Awais Aslam, Lu He, Teresa I. Madeira, Dietrich R. T. Zahn
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Astrophysics QB460-466 Physics QC1-999
Acceso en línea:	https://doaj.org/article/f6d2284c29cc4dc98dcafd1c8ecf5902
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spelling	oai:doaj.org-article:f6d2284c29cc4dc98dcafd1c8ecf59022021-12-02T16:24:53ZPlasmonic hot electron induced layer dependent anomalous Fröhlich interaction in InSe10.1038/s42005-021-00674-52399-3650https://doaj.org/article/f6d2284c29cc4dc98dcafd1c8ecf59022021-07-01T00:00:00Zhttps://doi.org/10.1038/s42005-021-00674-5https://doaj.org/toc/2399-3650Electron-phonon coupling plays a central role in a variety of low dimensional structures. The authors unveiled the subtle interaction between optical phonons and charge carriers by applying Raman spectroscopy to plasmonic nanostructures fabricated on atomically thin InSe. These findings provide insights to develop future high-performance nanoelectronic devices.Mahfujur RahamanMuhammad Awais AslamLu HeTeresa I. MadeiraDietrich R. T. ZahnNature PortfolioarticleAstrophysicsQB460-466PhysicsQC1-999ENCommunications Physics, Vol 4, Iss 1, Pp 1-8 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Astrophysics QB460-466 Physics QC1-999
spellingShingle	Astrophysics QB460-466 Physics QC1-999 Mahfujur Rahaman Muhammad Awais Aslam Lu He Teresa I. Madeira Dietrich R. T. Zahn Plasmonic hot electron induced layer dependent anomalous Fröhlich interaction in InSe
description	Electron-phonon coupling plays a central role in a variety of low dimensional structures. The authors unveiled the subtle interaction between optical phonons and charge carriers by applying Raman spectroscopy to plasmonic nanostructures fabricated on atomically thin InSe. These findings provide insights to develop future high-performance nanoelectronic devices.
format	article
author	Mahfujur Rahaman Muhammad Awais Aslam Lu He Teresa I. Madeira Dietrich R. T. Zahn
author_facet	Mahfujur Rahaman Muhammad Awais Aslam Lu He Teresa I. Madeira Dietrich R. T. Zahn
author_sort	Mahfujur Rahaman
title	Plasmonic hot electron induced layer dependent anomalous Fröhlich interaction in InSe
title_short	Plasmonic hot electron induced layer dependent anomalous Fröhlich interaction in InSe
title_full	Plasmonic hot electron induced layer dependent anomalous Fröhlich interaction in InSe
title_fullStr	Plasmonic hot electron induced layer dependent anomalous Fröhlich interaction in InSe
title_full_unstemmed	Plasmonic hot electron induced layer dependent anomalous Fröhlich interaction in InSe
title_sort	plasmonic hot electron induced layer dependent anomalous fröhlich interaction in inse
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/f6d2284c29cc4dc98dcafd1c8ecf5902
work_keys_str_mv	AT mahfujurrahaman plasmonichotelectroninducedlayerdependentanomalousfrohlichinteractionininse AT muhammadawaisaslam plasmonichotelectroninducedlayerdependentanomalousfrohlichinteractionininse AT luhe plasmonichotelectroninducedlayerdependentanomalousfrohlichinteractionininse AT teresaimadeira plasmonichotelectroninducedlayerdependentanomalousfrohlichinteractionininse AT dietrichrtzahn plasmonichotelectroninducedlayerdependentanomalousfrohlichinteractionininse
_version_	1718384147658964992

Plasmonic hot electron induced layer dependent anomalous Fröhlich interaction in InSe

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