4.2 K sensitivity-tunable radio frequency reflectometry of a physically defined p-channel silicon quantum dot

Abstract We demonstrate the measurement of p-channel silicon-on-insulator quantum dots at liquid helium temperatures by using a radio frequency (rf) reflectometry circuit comprising of two independently tunable GaAs varactors. This arrangement allows observing Coulomb diamonds at 4.2 K under nearly...

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Autores principales:	Sinan Bugu, Shimpei Nishiyama, Kimihiko Kato, Yongxun Liu, Shigenori Murakami, Takahiro Mori, Thierry Ferrus, Tetsuo Kodera
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/f7088c220e734d0da88ca46bb64b8f95
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spelling	oai:doaj.org-article:f7088c220e734d0da88ca46bb64b8f952021-12-02T19:16:19Z4.2 K sensitivity-tunable radio frequency reflectometry of a physically defined p-channel silicon quantum dot10.1038/s41598-021-99560-x2045-2322https://doaj.org/article/f7088c220e734d0da88ca46bb64b8f952021-10-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-99560-xhttps://doaj.org/toc/2045-2322Abstract We demonstrate the measurement of p-channel silicon-on-insulator quantum dots at liquid helium temperatures by using a radio frequency (rf) reflectometry circuit comprising of two independently tunable GaAs varactors. This arrangement allows observing Coulomb diamonds at 4.2 K under nearly best matching condition and optimal signal-to-noise ratio. We also discuss the rf leakage induced by the presence of the large top gate in MOS nanostructures and its consequence on the efficiency of rf-reflectometry. These results open the way to fast and sensitive readout in multi-gate architectures, including multi qubit platforms.Sinan BuguShimpei NishiyamaKimihiko KatoYongxun LiuShigenori MurakamiTakahiro MoriThierry FerrusTetsuo KoderaNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-8 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Sinan Bugu Shimpei Nishiyama Kimihiko Kato Yongxun Liu Shigenori Murakami Takahiro Mori Thierry Ferrus Tetsuo Kodera 4.2 K sensitivity-tunable radio frequency reflectometry of a physically defined p-channel silicon quantum dot
description	Abstract We demonstrate the measurement of p-channel silicon-on-insulator quantum dots at liquid helium temperatures by using a radio frequency (rf) reflectometry circuit comprising of two independently tunable GaAs varactors. This arrangement allows observing Coulomb diamonds at 4.2 K under nearly best matching condition and optimal signal-to-noise ratio. We also discuss the rf leakage induced by the presence of the large top gate in MOS nanostructures and its consequence on the efficiency of rf-reflectometry. These results open the way to fast and sensitive readout in multi-gate architectures, including multi qubit platforms.
format	article
author	Sinan Bugu Shimpei Nishiyama Kimihiko Kato Yongxun Liu Shigenori Murakami Takahiro Mori Thierry Ferrus Tetsuo Kodera
author_facet	Sinan Bugu Shimpei Nishiyama Kimihiko Kato Yongxun Liu Shigenori Murakami Takahiro Mori Thierry Ferrus Tetsuo Kodera
author_sort	Sinan Bugu
title	4.2 K sensitivity-tunable radio frequency reflectometry of a physically defined p-channel silicon quantum dot
title_short	4.2 K sensitivity-tunable radio frequency reflectometry of a physically defined p-channel silicon quantum dot
title_full	4.2 K sensitivity-tunable radio frequency reflectometry of a physically defined p-channel silicon quantum dot
title_fullStr	4.2 K sensitivity-tunable radio frequency reflectometry of a physically defined p-channel silicon quantum dot
title_full_unstemmed	4.2 K sensitivity-tunable radio frequency reflectometry of a physically defined p-channel silicon quantum dot
title_sort	4.2 k sensitivity-tunable radio frequency reflectometry of a physically defined p-channel silicon quantum dot
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/f7088c220e734d0da88ca46bb64b8f95
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4.2 K sensitivity-tunable radio frequency reflectometry of a physically defined p-channel silicon quantum dot

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