Observation of void formation patterns in SnAg films undergoing electromigration and simulation using random walk methods

Abstract With the ever-reducing sizes of electronic devices, the problem of electromigration (EM) has become relevant and requires attention. However, only the EM behavior of Sn–Ag solders within the solder joint structure has been focused on thus far. Therefore, in this study, a thin metallic film...

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Autores principales:	Zhi Jin, Yu-An Shen, Yang Zuo, Y. C. Chan, S. H. Mannan, Hiroshi Nishikawa
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/f788b85d8a1742ba8b65d7d8ac446c06
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spelling	oai:doaj.org-article:f788b85d8a1742ba8b65d7d8ac446c062021-12-02T17:32:59ZObservation of void formation patterns in SnAg films undergoing electromigration and simulation using random walk methods10.1038/s41598-021-88122-w2045-2322https://doaj.org/article/f788b85d8a1742ba8b65d7d8ac446c062021-04-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-88122-whttps://doaj.org/toc/2045-2322Abstract With the ever-reducing sizes of electronic devices, the problem of electromigration (EM) has become relevant and requires attention. However, only the EM behavior of Sn–Ag solders within the solder joint structure has been focused on thus far. Therefore, in this study, a thin metallic film composed of Sn–3.5Ag (wt.%) was subjected to a current density of 7.77 × 104 A/cm2 at a temperature of 15 °C to test the ability of existing EM models to predict the nucleation and evolution of voids generated by the resulting atomic migration. A computer simulation was then used to compute the coupled current distribution, thermal distribution, and atomic migration problems. It relied on an original random walk (RW) method, not previously applied to this problem, that is particularly well suited for modelling domains that undergo changes owing to the formation of voids. A comparison of the experimental results and computer simulations proves that the RW method can be applied successfully to this class of problems, but it also shows that imperfections in the film can lead to deviations from predicted patterns.Zhi JinYu-An ShenYang ZuoY. C. ChanS. H. MannanHiroshi NishikawaNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-12 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Zhi Jin Yu-An Shen Yang Zuo Y. C. Chan S. H. Mannan Hiroshi Nishikawa Observation of void formation patterns in SnAg films undergoing electromigration and simulation using random walk methods
description	Abstract With the ever-reducing sizes of electronic devices, the problem of electromigration (EM) has become relevant and requires attention. However, only the EM behavior of Sn–Ag solders within the solder joint structure has been focused on thus far. Therefore, in this study, a thin metallic film composed of Sn–3.5Ag (wt.%) was subjected to a current density of 7.77 × 104 A/cm2 at a temperature of 15 °C to test the ability of existing EM models to predict the nucleation and evolution of voids generated by the resulting atomic migration. A computer simulation was then used to compute the coupled current distribution, thermal distribution, and atomic migration problems. It relied on an original random walk (RW) method, not previously applied to this problem, that is particularly well suited for modelling domains that undergo changes owing to the formation of voids. A comparison of the experimental results and computer simulations proves that the RW method can be applied successfully to this class of problems, but it also shows that imperfections in the film can lead to deviations from predicted patterns.
format	article
author	Zhi Jin Yu-An Shen Yang Zuo Y. C. Chan S. H. Mannan Hiroshi Nishikawa
author_facet	Zhi Jin Yu-An Shen Yang Zuo Y. C. Chan S. H. Mannan Hiroshi Nishikawa
author_sort	Zhi Jin
title	Observation of void formation patterns in SnAg films undergoing electromigration and simulation using random walk methods
title_short	Observation of void formation patterns in SnAg films undergoing electromigration and simulation using random walk methods
title_full	Observation of void formation patterns in SnAg films undergoing electromigration and simulation using random walk methods
title_fullStr	Observation of void formation patterns in SnAg films undergoing electromigration and simulation using random walk methods
title_full_unstemmed	Observation of void formation patterns in SnAg films undergoing electromigration and simulation using random walk methods
title_sort	observation of void formation patterns in snag films undergoing electromigration and simulation using random walk methods
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/f788b85d8a1742ba8b65d7d8ac446c06
work_keys_str_mv	AT zhijin observationofvoidformationpatternsinsnagfilmsundergoingelectromigrationandsimulationusingrandomwalkmethods AT yuanshen observationofvoidformationpatternsinsnagfilmsundergoingelectromigrationandsimulationusingrandomwalkmethods AT yangzuo observationofvoidformationpatternsinsnagfilmsundergoingelectromigrationandsimulationusingrandomwalkmethods AT ycchan observationofvoidformationpatternsinsnagfilmsundergoingelectromigrationandsimulationusingrandomwalkmethods AT shmannan observationofvoidformationpatternsinsnagfilmsundergoingelectromigrationandsimulationusingrandomwalkmethods AT hiroshinishikawa observationofvoidformationpatternsinsnagfilmsundergoingelectromigrationandsimulationusingrandomwalkmethods
_version_	1718380159927582720

Observation of void formation patterns in SnAg films undergoing electromigration and simulation using random walk methods

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