Kinetic model of radiative recombination processes in 2H-MoS2 crystals
Steady-state photoluminescence (PL) measurements revealed 2H-MoS2 crystals. Two distinct radiative regions in the near infrared are performed. The first region consisting of several sharp lines is produced by bound excitons related to the halogen transport agent intercalated within the van der W...
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D.Ghitu Institute of Electronic Engineering and Nanotechnologies
2006
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oai:doaj.org-article:f7b5eb4cbd8d48cb8bae460587115e282021-11-21T12:09:59ZKinetic model of radiative recombination processes in 2H-MoS2 crystals 2537-63651810-648Xhttps://doaj.org/article/f7b5eb4cbd8d48cb8bae460587115e282006-01-01T00:00:00Zhttps://mjps.nanotech.md/archive/2006/article/3397https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365Steady-state photoluminescence (PL) measurements revealed 2H-MoS2 crystals. Two distinct radiative regions in the near infrared are performed. The first region consisting of several sharp lines is produced by bound excitons related to the halogen transport agent intercalated within the van der Waals gap of the layered compound. The second region is a broad spectral band, originates from the radiative recombination between an intrinsic defect center and the valence band in the conditions of a strong electron-phonon coupling. The spectral and temperature behavior of the PL intensity are described in the framework of a two- channel kinetic recombination model in thermal equilibrium conditions. Dumcenco, DumitruD.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 5, Iss 1, Pp 11-14 (2006) |
| institution |
DOAJ |
| collection |
DOAJ |
| language |
EN |
| topic |
Physics QC1-999 Electronics TK7800-8360 |
| spellingShingle |
Physics QC1-999 Electronics TK7800-8360 Dumcenco, Dumitru Kinetic model of radiative recombination processes in 2H-MoS2 crystals |
| description |
Steady-state photoluminescence (PL) measurements revealed 2H-MoS2 crystals. Two
distinct radiative regions in the near infrared are performed. The first region consisting of
several sharp lines is produced by bound excitons related to the halogen transport agent
intercalated within the van der Waals gap of the layered compound. The second region is a
broad spectral band, originates from the radiative recombination between an intrinsic defect
center and the valence band in the conditions of a strong electron-phonon coupling. The
spectral and temperature behavior of the PL intensity are described in the framework of a two-
channel kinetic recombination model in thermal equilibrium conditions.
|
| format |
article |
| author |
Dumcenco, Dumitru |
| author_facet |
Dumcenco, Dumitru |
| author_sort |
Dumcenco, Dumitru |
| title |
Kinetic model of radiative recombination processes in 2H-MoS2 crystals
|
| title_short |
Kinetic model of radiative recombination processes in 2H-MoS2 crystals
|
| title_full |
Kinetic model of radiative recombination processes in 2H-MoS2 crystals
|
| title_fullStr |
Kinetic model of radiative recombination processes in 2H-MoS2 crystals
|
| title_full_unstemmed |
Kinetic model of radiative recombination processes in 2H-MoS2 crystals
|
| title_sort |
kinetic model of radiative recombination processes in 2h-mos2 crystals |
| publisher |
D.Ghitu Institute of Electronic Engineering and Nanotechnologies |
| publishDate |
2006 |
| url |
https://doaj.org/article/f7b5eb4cbd8d48cb8bae460587115e28 |
| work_keys_str_mv |
AT dumcencodumitru kineticmodelofradiativerecombinationprocessesin2hmos2crystals |
| _version_ |
1718419220599930880 |