Three-dimensional crossbar arrays of self-rectifying Si/SiO2/Si memristors

Memristors are key structural units of complex memory and computing systems, yet most currently available memristors are based on materials that are not compatible with silicon technology. Here, the authors demonstrate a CMOS-compatible, self-rectifying memristor and arrays entirely based on p-Si/Si...

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Autores principales: Can Li, Lili Han, Hao Jiang, Moon-Hyung Jang, Peng Lin, Qing Wu, Mark Barnell, J. Joshua Yang, Huolin L. Xin, Qiangfei Xia
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2017
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Acceso en línea:https://doaj.org/article/f7d60c24e1cb47bd8dce7c9e1b65c5b2
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spelling oai:doaj.org-article:f7d60c24e1cb47bd8dce7c9e1b65c5b22021-12-02T15:38:56ZThree-dimensional crossbar arrays of self-rectifying Si/SiO2/Si memristors10.1038/ncomms156662041-1723https://doaj.org/article/f7d60c24e1cb47bd8dce7c9e1b65c5b22017-06-01T00:00:00Zhttps://doi.org/10.1038/ncomms15666https://doaj.org/toc/2041-1723Memristors are key structural units of complex memory and computing systems, yet most currently available memristors are based on materials that are not compatible with silicon technology. Here, the authors demonstrate a CMOS-compatible, self-rectifying memristor and arrays entirely based on p-Si/SiO2/n-Si.Can LiLili HanHao JiangMoon-Hyung JangPeng LinQing WuMark BarnellJ. Joshua YangHuolin L. XinQiangfei XiaNature PortfolioarticleScienceQENNature Communications, Vol 8, Iss 1, Pp 1-9 (2017)
institution DOAJ
collection DOAJ
language EN
topic Science
Q
spellingShingle Science
Q
Can Li
Lili Han
Hao Jiang
Moon-Hyung Jang
Peng Lin
Qing Wu
Mark Barnell
J. Joshua Yang
Huolin L. Xin
Qiangfei Xia
Three-dimensional crossbar arrays of self-rectifying Si/SiO2/Si memristors
description Memristors are key structural units of complex memory and computing systems, yet most currently available memristors are based on materials that are not compatible with silicon technology. Here, the authors demonstrate a CMOS-compatible, self-rectifying memristor and arrays entirely based on p-Si/SiO2/n-Si.
format article
author Can Li
Lili Han
Hao Jiang
Moon-Hyung Jang
Peng Lin
Qing Wu
Mark Barnell
J. Joshua Yang
Huolin L. Xin
Qiangfei Xia
author_facet Can Li
Lili Han
Hao Jiang
Moon-Hyung Jang
Peng Lin
Qing Wu
Mark Barnell
J. Joshua Yang
Huolin L. Xin
Qiangfei Xia
author_sort Can Li
title Three-dimensional crossbar arrays of self-rectifying Si/SiO2/Si memristors
title_short Three-dimensional crossbar arrays of self-rectifying Si/SiO2/Si memristors
title_full Three-dimensional crossbar arrays of self-rectifying Si/SiO2/Si memristors
title_fullStr Three-dimensional crossbar arrays of self-rectifying Si/SiO2/Si memristors
title_full_unstemmed Three-dimensional crossbar arrays of self-rectifying Si/SiO2/Si memristors
title_sort three-dimensional crossbar arrays of self-rectifying si/sio2/si memristors
publisher Nature Portfolio
publishDate 2017
url https://doaj.org/article/f7d60c24e1cb47bd8dce7c9e1b65c5b2
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