Three-dimensional crossbar arrays of self-rectifying Si/SiO2/Si memristors
Memristors are key structural units of complex memory and computing systems, yet most currently available memristors are based on materials that are not compatible with silicon technology. Here, the authors demonstrate a CMOS-compatible, self-rectifying memristor and arrays entirely based on p-Si/Si...
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Autores principales: | Can Li, Lili Han, Hao Jiang, Moon-Hyung Jang, Peng Lin, Qing Wu, Mark Barnell, J. Joshua Yang, Huolin L. Xin, Qiangfei Xia |
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Formato: | article |
Lenguaje: | EN |
Publicado: |
Nature Portfolio
2017
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Materias: | |
Acceso en línea: | https://doaj.org/article/f7d60c24e1cb47bd8dce7c9e1b65c5b2 |
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