ZrSnO<sub>4</sub>: A Solution-Processed Robust Electron Transport Layer of Efficient Planar-Heterojunction Perovskite Solar Cells
A robust electron transport layer (ETL) is an essential component in planar-heterojunction perovskite solar cells (PSCs). Herein, a sol-gel-driven ZrSnO<sub>4</sub> thin film is synthesized and its optoelectronic properties are systematically investigated. The optimized processing condit...
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| Autores principales: | , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
MDPI AG
2021
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/f7e57dc9eca04330abff64af22becafb |
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| Sumario: | A robust electron transport layer (ETL) is an essential component in planar-heterojunction perovskite solar cells (PSCs). Herein, a sol-gel-driven ZrSnO<sub>4</sub> thin film is synthesized and its optoelectronic properties are systematically investigated. The optimized processing conditions for sol-gel synthesis produce a ZrSnO<sub>4</sub> thin film that exhibits high optical transmittance in the UV-Vis-NIR range, a suitable conduction band maximum, and good electrical conductivity, revealing its potential for application in the ETL of planar-heterojunction PSCs. Consequently, the ZrSnO<sub>4</sub> ETL-based devices deliver promising power conversion efficiency (PCE) up to 19.05% from CH<sub>3</sub>NH<sub>3</sub>PbI<sub>3</sub>-based planar-heterojunction devices. Furthermore, the optimal ZrSnO<sub>4</sub> ETL also contributes to decent long-term stability of the non-encapsulated device for 360 h in an ambient atmosphere (<i>T</i>~25 °C, <i>RH</i>~55%,), suggesting great potential of the sol-gel-driven ZrSnO<sub>4</sub> thin film for a robust solution-processed ETL material in high-performance PSCs. |
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