ZrSnO<sub>4</sub>: A Solution-Processed Robust Electron Transport Layer of Efficient Planar-Heterojunction Perovskite Solar Cells

A robust electron transport layer (ETL) is an essential component in planar-heterojunction perovskite solar cells (PSCs). Herein, a sol-gel-driven ZrSnO<sub>4</sub> thin film is synthesized and its optoelectronic properties are systematically investigated. The optimized processing condit...

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Autores principales:	Jun Choi, Young Ki Park, Hee Dong Lee, Seok Il Hong, Woosung Lee, Jae Woong Jung
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	ZrSnO<sub>4</sub> sol-gel synthesis perovskite solar cells electron transport layer Chemistry QD1-999
Acceso en línea:	https://doaj.org/article/f7e57dc9eca04330abff64af22becafb
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spelling	oai:doaj.org-article:f7e57dc9eca04330abff64af22becafb2021-11-25T18:32:22ZZrSnO<sub>4</sub>: A Solution-Processed Robust Electron Transport Layer of Efficient Planar-Heterojunction Perovskite Solar Cells10.3390/nano111130902079-4991https://doaj.org/article/f7e57dc9eca04330abff64af22becafb2021-11-01T00:00:00Zhttps://www.mdpi.com/2079-4991/11/11/3090https://doaj.org/toc/2079-4991A robust electron transport layer (ETL) is an essential component in planar-heterojunction perovskite solar cells (PSCs). Herein, a sol-gel-driven ZrSnO<sub>4</sub> thin film is synthesized and its optoelectronic properties are systematically investigated. The optimized processing conditions for sol-gel synthesis produce a ZrSnO<sub>4</sub> thin film that exhibits high optical transmittance in the UV-Vis-NIR range, a suitable conduction band maximum, and good electrical conductivity, revealing its potential for application in the ETL of planar-heterojunction PSCs. Consequently, the ZrSnO<sub>4</sub> ETL-based devices deliver promising power conversion efficiency (PCE) up to 19.05% from CH<sub>3</sub>NH<sub>3</sub>PbI<sub>3</sub>-based planar-heterojunction devices. Furthermore, the optimal ZrSnO<sub>4</sub> ETL also contributes to decent long-term stability of the non-encapsulated device for 360 h in an ambient atmosphere (<i>T</i>~25 °C, <i>RH</i>~55%,), suggesting great potential of the sol-gel-driven ZrSnO<sub>4</sub> thin film for a robust solution-processed ETL material in high-performance PSCs.Jun ChoiYoung Ki ParkHee Dong LeeSeok Il HongWoosung LeeJae Woong JungMDPI AGarticleZrSnO<sub>4</sub>sol-gel synthesisperovskite solar cellselectron transport layerChemistryQD1-999ENNanomaterials, Vol 11, Iss 3090, p 3090 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	ZrSnO<sub>4</sub> sol-gel synthesis perovskite solar cells electron transport layer Chemistry QD1-999
spellingShingle	ZrSnO<sub>4</sub> sol-gel synthesis perovskite solar cells electron transport layer Chemistry QD1-999 Jun Choi Young Ki Park Hee Dong Lee Seok Il Hong Woosung Lee Jae Woong Jung ZrSnO<sub>4</sub>: A Solution-Processed Robust Electron Transport Layer of Efficient Planar-Heterojunction Perovskite Solar Cells
description	A robust electron transport layer (ETL) is an essential component in planar-heterojunction perovskite solar cells (PSCs). Herein, a sol-gel-driven ZrSnO<sub>4</sub> thin film is synthesized and its optoelectronic properties are systematically investigated. The optimized processing conditions for sol-gel synthesis produce a ZrSnO<sub>4</sub> thin film that exhibits high optical transmittance in the UV-Vis-NIR range, a suitable conduction band maximum, and good electrical conductivity, revealing its potential for application in the ETL of planar-heterojunction PSCs. Consequently, the ZrSnO<sub>4</sub> ETL-based devices deliver promising power conversion efficiency (PCE) up to 19.05% from CH<sub>3</sub>NH<sub>3</sub>PbI<sub>3</sub>-based planar-heterojunction devices. Furthermore, the optimal ZrSnO<sub>4</sub> ETL also contributes to decent long-term stability of the non-encapsulated device for 360 h in an ambient atmosphere (<i>T</i>~25 °C, <i>RH</i>~55%,), suggesting great potential of the sol-gel-driven ZrSnO<sub>4</sub> thin film for a robust solution-processed ETL material in high-performance PSCs.
format	article
author	Jun Choi Young Ki Park Hee Dong Lee Seok Il Hong Woosung Lee Jae Woong Jung
author_facet	Jun Choi Young Ki Park Hee Dong Lee Seok Il Hong Woosung Lee Jae Woong Jung
author_sort	Jun Choi
title	ZrSnO<sub>4</sub>: A Solution-Processed Robust Electron Transport Layer of Efficient Planar-Heterojunction Perovskite Solar Cells
title_short	ZrSnO<sub>4</sub>: A Solution-Processed Robust Electron Transport Layer of Efficient Planar-Heterojunction Perovskite Solar Cells
title_full	ZrSnO<sub>4</sub>: A Solution-Processed Robust Electron Transport Layer of Efficient Planar-Heterojunction Perovskite Solar Cells
title_fullStr	ZrSnO<sub>4</sub>: A Solution-Processed Robust Electron Transport Layer of Efficient Planar-Heterojunction Perovskite Solar Cells
title_full_unstemmed	ZrSnO<sub>4</sub>: A Solution-Processed Robust Electron Transport Layer of Efficient Planar-Heterojunction Perovskite Solar Cells
title_sort	zrsno<sub>4</sub>: a solution-processed robust electron transport layer of efficient planar-heterojunction perovskite solar cells
publisher	MDPI AG
publishDate	2021
url	https://doaj.org/article/f7e57dc9eca04330abff64af22becafb
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ZrSnO<sub>4</sub>: A Solution-Processed Robust Electron Transport Layer of Efficient Planar-Heterojunction Perovskite Solar Cells

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