Effect of RF Power on the Physical Properties of Sputtered ZnSe Nanostructured Thin Films for Photovoltaic Applications

Zinc selenide (ZnSe) thin films were deposited by RF magnetron sputtering in specific conditions, onto optical glass substrates, at different RF plasma power. The prepared ZnSe layers were afterwards subjected to a series of structural, morphological, optical and electrical characterizations. The ob...

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Autores principales:	Ovidiu Toma, Vlad-Andrei Antohe, Ana-Maria Panaitescu, Sorina Iftimie, Ana-Maria Răduţă, Adrian Radu, Lucian Ion, Ştefan Antohe
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	zinc selenide (ZnSe) thin films radio frequency (RF) magnetron sputtering physical properties spectroscopic ellipsometry electrical measurements Chemistry QD1-999
Acceso en línea:	https://doaj.org/article/f80d1a711e7f45698c8fc9146c8c8627
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spelling	oai:doaj.org-article:f80d1a711e7f45698c8fc9146c8c86272021-11-25T18:30:13ZEffect of RF Power on the Physical Properties of Sputtered ZnSe Nanostructured Thin Films for Photovoltaic Applications10.3390/nano111128412079-4991https://doaj.org/article/f80d1a711e7f45698c8fc9146c8c86272021-10-01T00:00:00Zhttps://www.mdpi.com/2079-4991/11/11/2841https://doaj.org/toc/2079-4991Zinc selenide (ZnSe) thin films were deposited by RF magnetron sputtering in specific conditions, onto optical glass substrates, at different RF plasma power. The prepared ZnSe layers were afterwards subjected to a series of structural, morphological, optical and electrical characterizations. The obtained results pointed out the optimal sputtering conditions to obtain ZnSe films of excellent quality, especially in terms of better optical properties, lower superficial roughness, reduced micro-strain and a band gap value closer to the one reported for the ZnSe bulk semiconducting material. Electrical characterization were afterwards carried out by measuring the current–voltage (I-V) characteristics at room temperature, of prepared “sandwich”-like Au/ZnSe/Au structures. The analysis of I-V characteristics have shown that at low injection levels there is an Ohmic conduction, followed at high injection levels, after a well-defined transition voltage, by a Space Charge Limited Current (SCLC) in the presence of an exponential trap distribution in the band gap of the ZnSe thin films. The results obtained from all the characterization techniques presented, demonstrated thus the potential of ZnSe thin films sputtered under optimized RF plasma conditions, to be used as alternative environmentally-friendly Cd-free window layers within photovoltaic cells manufacturing.Ovidiu TomaVlad-Andrei AntoheAna-Maria PanaitescuSorina IftimieAna-Maria RăduţăAdrian RaduLucian IonŞtefan AntoheMDPI AGarticlezinc selenide (ZnSe)thin filmsradio frequency (RF) magnetron sputteringphysical propertiesspectroscopic ellipsometryelectrical measurementsChemistryQD1-999ENNanomaterials, Vol 11, Iss 2841, p 2841 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	zinc selenide (ZnSe) thin films radio frequency (RF) magnetron sputtering physical properties spectroscopic ellipsometry electrical measurements Chemistry QD1-999
spellingShingle	zinc selenide (ZnSe) thin films radio frequency (RF) magnetron sputtering physical properties spectroscopic ellipsometry electrical measurements Chemistry QD1-999 Ovidiu Toma Vlad-Andrei Antohe Ana-Maria Panaitescu Sorina Iftimie Ana-Maria Răduţă Adrian Radu Lucian Ion Ştefan Antohe Effect of RF Power on the Physical Properties of Sputtered ZnSe Nanostructured Thin Films for Photovoltaic Applications
description	Zinc selenide (ZnSe) thin films were deposited by RF magnetron sputtering in specific conditions, onto optical glass substrates, at different RF plasma power. The prepared ZnSe layers were afterwards subjected to a series of structural, morphological, optical and electrical characterizations. The obtained results pointed out the optimal sputtering conditions to obtain ZnSe films of excellent quality, especially in terms of better optical properties, lower superficial roughness, reduced micro-strain and a band gap value closer to the one reported for the ZnSe bulk semiconducting material. Electrical characterization were afterwards carried out by measuring the current–voltage (I-V) characteristics at room temperature, of prepared “sandwich”-like Au/ZnSe/Au structures. The analysis of I-V characteristics have shown that at low injection levels there is an Ohmic conduction, followed at high injection levels, after a well-defined transition voltage, by a Space Charge Limited Current (SCLC) in the presence of an exponential trap distribution in the band gap of the ZnSe thin films. The results obtained from all the characterization techniques presented, demonstrated thus the potential of ZnSe thin films sputtered under optimized RF plasma conditions, to be used as alternative environmentally-friendly Cd-free window layers within photovoltaic cells manufacturing.
format	article
author	Ovidiu Toma Vlad-Andrei Antohe Ana-Maria Panaitescu Sorina Iftimie Ana-Maria Răduţă Adrian Radu Lucian Ion Ştefan Antohe
author_facet	Ovidiu Toma Vlad-Andrei Antohe Ana-Maria Panaitescu Sorina Iftimie Ana-Maria Răduţă Adrian Radu Lucian Ion Ştefan Antohe
author_sort	Ovidiu Toma
title	Effect of RF Power on the Physical Properties of Sputtered ZnSe Nanostructured Thin Films for Photovoltaic Applications
title_short	Effect of RF Power on the Physical Properties of Sputtered ZnSe Nanostructured Thin Films for Photovoltaic Applications
title_full	Effect of RF Power on the Physical Properties of Sputtered ZnSe Nanostructured Thin Films for Photovoltaic Applications
title_fullStr	Effect of RF Power on the Physical Properties of Sputtered ZnSe Nanostructured Thin Films for Photovoltaic Applications
title_full_unstemmed	Effect of RF Power on the Physical Properties of Sputtered ZnSe Nanostructured Thin Films for Photovoltaic Applications
title_sort	effect of rf power on the physical properties of sputtered znse nanostructured thin films for photovoltaic applications
publisher	MDPI AG
publishDate	2021
url	https://doaj.org/article/f80d1a711e7f45698c8fc9146c8c8627
work_keys_str_mv	AT ovidiutoma effectofrfpoweronthephysicalpropertiesofsputteredznsenanostructuredthinfilmsforphotovoltaicapplications AT vladandreiantohe effectofrfpoweronthephysicalpropertiesofsputteredznsenanostructuredthinfilmsforphotovoltaicapplications AT anamariapanaitescu effectofrfpoweronthephysicalpropertiesofsputteredznsenanostructuredthinfilmsforphotovoltaicapplications AT sorinaiftimie effectofrfpoweronthephysicalpropertiesofsputteredznsenanostructuredthinfilmsforphotovoltaicapplications AT anamariaraduta effectofrfpoweronthephysicalpropertiesofsputteredznsenanostructuredthinfilmsforphotovoltaicapplications AT adrianradu effectofrfpoweronthephysicalpropertiesofsputteredznsenanostructuredthinfilmsforphotovoltaicapplications AT lucianion effectofrfpoweronthephysicalpropertiesofsputteredznsenanostructuredthinfilmsforphotovoltaicapplications AT stefanantohe effectofrfpoweronthephysicalpropertiesofsputteredznsenanostructuredthinfilmsforphotovoltaicapplications
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Effect of RF Power on the Physical Properties of Sputtered ZnSe Nanostructured Thin Films for Photovoltaic Applications

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