Photo-excited charge carriers suppress sub-terahertz phonon mode in silicon at room temperature

Direct measurement of electron-phonon interactions at the single-mode level has been a challenge. Here, Liaoet al. use a three-pulse photoacoustic spectroscopy technique to investigate the damping of a single sub-terahertz coherent phonon mode by photo-excited free charge carriers in silicon at room...

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Autores principales: Bolin Liao, A. A. Maznev, Keith A. Nelson, Gang Chen
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2016
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Acceso en línea:https://doaj.org/article/f8262f17854749fd866ec9fd5784090d
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Sumario:Direct measurement of electron-phonon interactions at the single-mode level has been a challenge. Here, Liaoet al. use a three-pulse photoacoustic spectroscopy technique to investigate the damping of a single sub-terahertz coherent phonon mode by photo-excited free charge carriers in silicon at room temperature.