Gate-Voltage-Modulated Spin Precession in Graphene/WS<sub>2</sub> Field-Effect Transistors
Transition metal dichalcogenide materials are studied to investigate unexplored research avenues, such as spin transport behavior in 2-dimensional materials due to their strong spin-orbital interaction (SOI) and the proximity effect in van der Waals (vdW) heterostructures. Interfacial interactions b...
Guardado en:
| Autores principales: | , , |
|---|---|
| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
MDPI AG
2021
|
| Materias: | |
| Acceso en línea: | https://doaj.org/article/f8292237891a493692b82317cd554d89 |
| Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
| Sumario: | Transition metal dichalcogenide materials are studied to investigate unexplored research avenues, such as spin transport behavior in 2-dimensional materials due to their strong spin-orbital interaction (SOI) and the proximity effect in van der Waals (vdW) heterostructures. Interfacial interactions between bilayer graphene (BLG) and multilayer tungsten disulfide (ML-WS<sub>2</sub>) give rise to fascinating properties for the realization of advanced spintronic devices. In this study, a BLG/ML-WS<sub>2</sub> vdW heterostructure spin field-effect transistor (FET) was fabricated to demonstrate the gate modulation of Rashba-type SOI and spin precession angle. The gate modulation of Rashba-type SOI and spin precession has been confirmed using the Hanle measurement. The change in spin precession angle agrees well with the local and non-local signals of the BLG/ML-WS<sub>2</sub> spin FET. The operation of a spin FET in the absence of a magnetic field at room temperature is successfully demonstrated. |
|---|