Gate-Voltage-Modulated Spin Precession in Graphene/WS<sub>2</sub> Field-Effect Transistors

Transition metal dichalcogenide materials are studied to investigate unexplored research avenues, such as spin transport behavior in 2-dimensional materials due to their strong spin-orbital interaction (SOI) and the proximity effect in van der Waals (vdW) heterostructures. Interfacial interactions b...

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Autores principales:	Amir Muhammad Afzal, Muhammad Farooq Khan, Jonghwa Eom
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	spintronics spin-orbit interaction Hanle spin precession graphene spin field-effect transistor Electronics TK7800-8360
Acceso en línea:	https://doaj.org/article/f8292237891a493692b82317cd554d89
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id	oai:doaj.org-article:f8292237891a493692b82317cd554d89
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spelling	oai:doaj.org-article:f8292237891a493692b82317cd554d892021-11-25T17:25:35ZGate-Voltage-Modulated Spin Precession in Graphene/WS<sub>2</sub> Field-Effect Transistors10.3390/electronics102228792079-9292https://doaj.org/article/f8292237891a493692b82317cd554d892021-11-01T00:00:00Zhttps://www.mdpi.com/2079-9292/10/22/2879https://doaj.org/toc/2079-9292Transition metal dichalcogenide materials are studied to investigate unexplored research avenues, such as spin transport behavior in 2-dimensional materials due to their strong spin-orbital interaction (SOI) and the proximity effect in van der Waals (vdW) heterostructures. Interfacial interactions between bilayer graphene (BLG) and multilayer tungsten disulfide (ML-WS<sub>2</sub>) give rise to fascinating properties for the realization of advanced spintronic devices. In this study, a BLG/ML-WS<sub>2</sub> vdW heterostructure spin field-effect transistor (FET) was fabricated to demonstrate the gate modulation of Rashba-type SOI and spin precession angle. The gate modulation of Rashba-type SOI and spin precession has been confirmed using the Hanle measurement. The change in spin precession angle agrees well with the local and non-local signals of the BLG/ML-WS<sub>2</sub> spin FET. The operation of a spin FET in the absence of a magnetic field at room temperature is successfully demonstrated.Amir Muhammad AfzalMuhammad Farooq KhanJonghwa EomMDPI AGarticlespintronicsspin-orbit interactionHanle spin precessiongraphenespin field-effect transistorElectronicsTK7800-8360ENElectronics, Vol 10, Iss 2879, p 2879 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	spintronics spin-orbit interaction Hanle spin precession graphene spin field-effect transistor Electronics TK7800-8360
spellingShingle	spintronics spin-orbit interaction Hanle spin precession graphene spin field-effect transistor Electronics TK7800-8360 Amir Muhammad Afzal Muhammad Farooq Khan Jonghwa Eom Gate-Voltage-Modulated Spin Precession in Graphene/WS<sub>2</sub> Field-Effect Transistors
description	Transition metal dichalcogenide materials are studied to investigate unexplored research avenues, such as spin transport behavior in 2-dimensional materials due to their strong spin-orbital interaction (SOI) and the proximity effect in van der Waals (vdW) heterostructures. Interfacial interactions between bilayer graphene (BLG) and multilayer tungsten disulfide (ML-WS<sub>2</sub>) give rise to fascinating properties for the realization of advanced spintronic devices. In this study, a BLG/ML-WS<sub>2</sub> vdW heterostructure spin field-effect transistor (FET) was fabricated to demonstrate the gate modulation of Rashba-type SOI and spin precession angle. The gate modulation of Rashba-type SOI and spin precession has been confirmed using the Hanle measurement. The change in spin precession angle agrees well with the local and non-local signals of the BLG/ML-WS<sub>2</sub> spin FET. The operation of a spin FET in the absence of a magnetic field at room temperature is successfully demonstrated.
format	article
author	Amir Muhammad Afzal Muhammad Farooq Khan Jonghwa Eom
author_facet	Amir Muhammad Afzal Muhammad Farooq Khan Jonghwa Eom
author_sort	Amir Muhammad Afzal
title	Gate-Voltage-Modulated Spin Precession in Graphene/WS<sub>2</sub> Field-Effect Transistors
title_short	Gate-Voltage-Modulated Spin Precession in Graphene/WS<sub>2</sub> Field-Effect Transistors
title_full	Gate-Voltage-Modulated Spin Precession in Graphene/WS<sub>2</sub> Field-Effect Transistors
title_fullStr	Gate-Voltage-Modulated Spin Precession in Graphene/WS<sub>2</sub> Field-Effect Transistors
title_full_unstemmed	Gate-Voltage-Modulated Spin Precession in Graphene/WS<sub>2</sub> Field-Effect Transistors
title_sort	gate-voltage-modulated spin precession in graphene/ws<sub>2</sub> field-effect transistors
publisher	MDPI AG
publishDate	2021
url	https://doaj.org/article/f8292237891a493692b82317cd554d89
work_keys_str_mv	AT amirmuhammadafzal gatevoltagemodulatedspinprecessioningraphenewssub2subfieldeffecttransistors AT muhammadfarooqkhan gatevoltagemodulatedspinprecessioningraphenewssub2subfieldeffecttransistors AT jonghwaeom gatevoltagemodulatedspinprecessioningraphenewssub2subfieldeffecttransistors
_version_	1718412384928792576

Gate-Voltage-Modulated Spin Precession in Graphene/WS<sub>2</sub> Field-Effect Transistors

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