Nano-patterning on multilayer MoS2 via block copolymer lithography for highly sensitive and responsive phototransistors

Thin-film phototransistors based on multilayer MoS2 are of great technological importance, but their photoresponsivity may be hindered by an indirect bandgap. Here, nano-patterning of multilayer MoS2 overcomes this limitation by inducing trap states within the bandgap, resulting in a high photorespo...

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Bibliographic Details
Main Authors: Heekyeong Park, Jiyoul Lee, Gyuchull Han, AbdulAziz AlMutairi, Young-Hoon Kim, Jaichan Lee, Young-Min Kim, Young Jun Kim, Youngki Yoon, Sunkook Kim
Format: article
Language:EN
Published: Nature Portfolio 2021
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Online Access:https://doaj.org/article/f8512a2a57f24f1fa535a2a367ea8f19
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Summary:Thin-film phototransistors based on multilayer MoS2 are of great technological importance, but their photoresponsivity may be hindered by an indirect bandgap. Here, nano-patterning of multilayer MoS2 overcomes this limitation by inducing trap states within the bandgap, resulting in a high photoresponsivity of 622.2 A W−1.