Nano-patterning on multilayer MoS2 via block copolymer lithography for highly sensitive and responsive phototransistors
Thin-film phototransistors based on multilayer MoS2 are of great technological importance, but their photoresponsivity may be hindered by an indirect bandgap. Here, nano-patterning of multilayer MoS2 overcomes this limitation by inducing trap states within the bandgap, resulting in a high photorespo...
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| Auteurs principaux: | , , , , , , , , , |
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| Format: | article |
| Langue: | EN |
| Publié: |
Nature Portfolio
2021
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| Accès en ligne: | https://doaj.org/article/f8512a2a57f24f1fa535a2a367ea8f19 |
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| Résumé: | Thin-film phototransistors based on multilayer MoS2 are of great technological importance, but their photoresponsivity may be hindered by an indirect bandgap. Here, nano-patterning of multilayer MoS2 overcomes this limitation by inducing trap states within the bandgap, resulting in a high photoresponsivity of 622.2 A W−1. |
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