Nano-patterning on multilayer MoS2 via block copolymer lithography for highly sensitive and responsive phototransistors

Thin-film phototransistors based on multilayer MoS2 are of great technological importance, but their photoresponsivity may be hindered by an indirect bandgap. Here, nano-patterning of multilayer MoS2 overcomes this limitation by inducing trap states within the bandgap, resulting in a high photorespo...

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Autores principales:	Heekyeong Park, Jiyoul Lee, Gyuchull Han, AbdulAziz AlMutairi, Young-Hoon Kim, Jaichan Lee, Young-Min Kim, Young Jun Kim, Youngki Yoon, Sunkook Kim
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Materials of engineering and construction. Mechanics of materials TA401-492
Acceso en línea:	https://doaj.org/article/f8512a2a57f24f1fa535a2a367ea8f19
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spelling	oai:doaj.org-article:f8512a2a57f24f1fa535a2a367ea8f192021-12-02T19:13:54ZNano-patterning on multilayer MoS2 via block copolymer lithography for highly sensitive and responsive phototransistors10.1038/s43246-021-00197-02662-4443https://doaj.org/article/f8512a2a57f24f1fa535a2a367ea8f192021-09-01T00:00:00Zhttps://doi.org/10.1038/s43246-021-00197-0https://doaj.org/toc/2662-4443Thin-film phototransistors based on multilayer MoS2 are of great technological importance, but their photoresponsivity may be hindered by an indirect bandgap. Here, nano-patterning of multilayer MoS2 overcomes this limitation by inducing trap states within the bandgap, resulting in a high photoresponsivity of 622.2 A W−1.Heekyeong ParkJiyoul LeeGyuchull HanAbdulAziz AlMutairiYoung-Hoon KimJaichan LeeYoung-Min KimYoung Jun KimYoungki YoonSunkook KimNature PortfolioarticleMaterials of engineering and construction. Mechanics of materialsTA401-492ENCommunications Materials, Vol 2, Iss 1, Pp 1-9 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Materials of engineering and construction. Mechanics of materials TA401-492
spellingShingle	Materials of engineering and construction. Mechanics of materials TA401-492 Heekyeong Park Jiyoul Lee Gyuchull Han AbdulAziz AlMutairi Young-Hoon Kim Jaichan Lee Young-Min Kim Young Jun Kim Youngki Yoon Sunkook Kim Nano-patterning on multilayer MoS2 via block copolymer lithography for highly sensitive and responsive phototransistors
description	Thin-film phototransistors based on multilayer MoS2 are of great technological importance, but their photoresponsivity may be hindered by an indirect bandgap. Here, nano-patterning of multilayer MoS2 overcomes this limitation by inducing trap states within the bandgap, resulting in a high photoresponsivity of 622.2 A W−1.
format	article
author	Heekyeong Park Jiyoul Lee Gyuchull Han AbdulAziz AlMutairi Young-Hoon Kim Jaichan Lee Young-Min Kim Young Jun Kim Youngki Yoon Sunkook Kim
author_facet	Heekyeong Park Jiyoul Lee Gyuchull Han AbdulAziz AlMutairi Young-Hoon Kim Jaichan Lee Young-Min Kim Young Jun Kim Youngki Yoon Sunkook Kim
author_sort	Heekyeong Park
title	Nano-patterning on multilayer MoS2 via block copolymer lithography for highly sensitive and responsive phototransistors
title_short	Nano-patterning on multilayer MoS2 via block copolymer lithography for highly sensitive and responsive phototransistors
title_full	Nano-patterning on multilayer MoS2 via block copolymer lithography for highly sensitive and responsive phototransistors
title_fullStr	Nano-patterning on multilayer MoS2 via block copolymer lithography for highly sensitive and responsive phototransistors
title_full_unstemmed	Nano-patterning on multilayer MoS2 via block copolymer lithography for highly sensitive and responsive phototransistors
title_sort	nano-patterning on multilayer mos2 via block copolymer lithography for highly sensitive and responsive phototransistors
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/f8512a2a57f24f1fa535a2a367ea8f19
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Nano-patterning on multilayer MoS2 via block copolymer lithography for highly sensitive and responsive phototransistors

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