In-Place Characterization of On-State Voltage for SiC MOSFETs: Controlled Shoot-Through vs. Film Heater

The on-state voltage of MOSFETs is a convenient and powerful temperature-sensitive electric parameter (TSEP) to determine the junction temperature, thus enabling device monitoring, protection, diagnostics and prognostics. The main hurdle in the use of the on-state voltage as a TSEP is the per-device...

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Autores principales:	Alessandro Soldati, Matteo Dalboni, Roberto Menozzi, Carlo Concari
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	on-state voltage TSEP junction temperature model calibration pulsed measurements Electronics TK7800-8360
Acceso en línea:	https://doaj.org/article/f8c26aa5ea1d46469c9c6f6d37ad56d4
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spelling	oai:doaj.org-article:f8c26aa5ea1d46469c9c6f6d37ad56d42021-11-25T17:24:17ZIn-Place Characterization of On-State Voltage for SiC MOSFETs: Controlled Shoot-Through vs. Film Heater10.3390/electronics102227452079-9292https://doaj.org/article/f8c26aa5ea1d46469c9c6f6d37ad56d42021-11-01T00:00:00Zhttps://www.mdpi.com/2079-9292/10/22/2745https://doaj.org/toc/2079-9292The on-state voltage of MOSFETs is a convenient and powerful temperature-sensitive electric parameter (TSEP) to determine the junction temperature, thus enabling device monitoring, protection, diagnostics and prognostics. The main hurdle in the use of the on-state voltage as a TSEP is the per-device characterization procedure, to be carried out in a controlled environment, with high costs. In this paper, we compare two novel techniques for MOSFET junction temperature estimation: controlled shoot-through and direct heating by resistive heaters embedded in two Kapton (polyimide) films. Both allow in-place characterization of the TSEP curve with the device mounted in its final circuit and assembly, including the working heat sink. The two methods are also validated against the conventional procedure in a thermal chamber.Alessandro SoldatiMatteo DalboniRoberto MenozziCarlo ConcariMDPI AGarticleon-state voltageTSEPjunction temperaturemodel calibrationpulsed measurementsElectronicsTK7800-8360ENElectronics, Vol 10, Iss 2745, p 2745 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	on-state voltage TSEP junction temperature model calibration pulsed measurements Electronics TK7800-8360
spellingShingle	on-state voltage TSEP junction temperature model calibration pulsed measurements Electronics TK7800-8360 Alessandro Soldati Matteo Dalboni Roberto Menozzi Carlo Concari In-Place Characterization of On-State Voltage for SiC MOSFETs: Controlled Shoot-Through vs. Film Heater
description	The on-state voltage of MOSFETs is a convenient and powerful temperature-sensitive electric parameter (TSEP) to determine the junction temperature, thus enabling device monitoring, protection, diagnostics and prognostics. The main hurdle in the use of the on-state voltage as a TSEP is the per-device characterization procedure, to be carried out in a controlled environment, with high costs. In this paper, we compare two novel techniques for MOSFET junction temperature estimation: controlled shoot-through and direct heating by resistive heaters embedded in two Kapton (polyimide) films. Both allow in-place characterization of the TSEP curve with the device mounted in its final circuit and assembly, including the working heat sink. The two methods are also validated against the conventional procedure in a thermal chamber.
format	article
author	Alessandro Soldati Matteo Dalboni Roberto Menozzi Carlo Concari
author_facet	Alessandro Soldati Matteo Dalboni Roberto Menozzi Carlo Concari
author_sort	Alessandro Soldati
title	In-Place Characterization of On-State Voltage for SiC MOSFETs: Controlled Shoot-Through vs. Film Heater
title_short	In-Place Characterization of On-State Voltage for SiC MOSFETs: Controlled Shoot-Through vs. Film Heater
title_full	In-Place Characterization of On-State Voltage for SiC MOSFETs: Controlled Shoot-Through vs. Film Heater
title_fullStr	In-Place Characterization of On-State Voltage for SiC MOSFETs: Controlled Shoot-Through vs. Film Heater
title_full_unstemmed	In-Place Characterization of On-State Voltage for SiC MOSFETs: Controlled Shoot-Through vs. Film Heater
title_sort	in-place characterization of on-state voltage for sic mosfets: controlled shoot-through vs. film heater
publisher	MDPI AG
publishDate	2021
url	https://doaj.org/article/f8c26aa5ea1d46469c9c6f6d37ad56d4
work_keys_str_mv	AT alessandrosoldati inplacecharacterizationofonstatevoltageforsicmosfetscontrolledshootthroughvsfilmheater AT matteodalboni inplacecharacterizationofonstatevoltageforsicmosfetscontrolledshootthroughvsfilmheater AT robertomenozzi inplacecharacterizationofonstatevoltageforsicmosfetscontrolledshootthroughvsfilmheater AT carloconcari inplacecharacterizationofonstatevoltageforsicmosfetscontrolledshootthroughvsfilmheater
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In-Place Characterization of On-State Voltage for SiC MOSFETs: Controlled Shoot-Through vs. Film Heater

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