Magnetization dependent tunneling conductance of ferromagnetic barriers
Many standard techniques for investigating magnetic properties in the bulk are ill suited to atomically thin van der Waals materials. Here, Wang et al take a prototypical van der Waals ferromagnet, Chromium Bromide, and show how tunneling conductance can elucidate the material magnetic properties.
Enregistré dans:
Auteurs principaux: | Zhe Wang, Ignacio Gutiérrez-Lezama, Dumitru Dumcenco, Nicolas Ubrig, Takashi Taniguchi, Kenji Watanabe, Enrico Giannini, Marco Gibertini, Alberto F. Morpurgo |
---|---|
Format: | article |
Langue: | EN |
Publié: |
Nature Portfolio
2021
|
Sujets: | |
Accès en ligne: | https://doaj.org/article/f8e1782d469e4008a15a86a1f3b8c586 |
Tags: |
Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!
|
Documents similaires
-
Very large tunneling magnetoresistance in layered magnetic semiconductor CrI3
par: Zhe Wang, et autres
Publié: (2018) -
Light from van der Waals quantum tunneling devices
par: Markus Parzefall, et autres
Publié: (2019) -
Quantum tunneling in magnetic tunneling junctions
par: Evgeni Cruz de Gracia, et autres
Publié: (2012) -
Resolving the spin splitting in the conduction band of monolayer MoS2
par: Kolyo Marinov, et autres
Publié: (2017) -
Field- and temperature-dependent quantum tunnelling of the magnetisation in a large barrier single-molecule magnet
par: You-Song Ding, et autres
Publié: (2018)