Electron tunneling in an asymmetry heterostructure under the influence of both dresselhaus and rashba spin–orbit terms
The problem of spin dependent electron transmission through an asymmetric InAs/GaSb/InAs well is studied theoretically in order to investigate the output transmission current polarization at a zero magnetic field. Transparency of electron transmission is calculated as a function of electron energ...
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
D.Ghitu Institute of Electronic Engineering and Nanotechnologies
2010
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/f932f96ce2b74bd886dad7d41846055b |
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| Sumario: | The problem of spin dependent electron transmission through an asymmetric
InAs/GaSb/InAs well is studied theoretically in order to investigate the output transmission current polarization at a zero magnetic field. Transparency of electron transmission is calculated as a
function of electron energy as well as the well width within the one electron band approximation
along with the spin orbit interaction. We predict that a spin-polarized current spontaneously
emerges in the absence of magnetic material and magnetic field. This phenomenon may offer a
novel way for generating a spin-polarized current, replacing the traditional spin-injection method.
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