Spin-dependent thermoelectric effects in Fe-C6 doped monolayer MoS2
Abstract By using the non-equilibrium Green’s function with density functional theory, we have studied the thermal spin transport properties of Fe-C6 cluster doped monolayer MoS2. The results show that the device has a perfect Seebeck effect under temperature difference without gate voltage or bias...
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Nature Portfolio
2017
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oai:doaj.org-article:f96bf1b25ad44091a164a2e87abce1f32021-12-02T16:07:56ZSpin-dependent thermoelectric effects in Fe-C6 doped monolayer MoS210.1038/s41598-017-00599-62045-2322https://doaj.org/article/f96bf1b25ad44091a164a2e87abce1f32017-03-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-00599-6https://doaj.org/toc/2045-2322Abstract By using the non-equilibrium Green’s function with density functional theory, we have studied the thermal spin transport properties of Fe-C6 cluster doped monolayer MoS2. The results show that the device has a perfect Seebeck effect under temperature difference without gate voltage or bias voltage. Moreover, we also find the thermal colossal magnetoresistance effect, which is as high as 107%. The competition between spin up electrons and spin down holes of the parallel spin configuration leads to peculiar behavior of colossal magnetoresistance and thermo-current, which is essential for the design of thermal transistors. These results are useful in future MoS2-based multifunctional spin caloritronic devices.Lin ZhuFei ZouGuoying GaoKailun YaoNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-7 (2017) |
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Medicine R Science Q Lin Zhu Fei Zou Guoying Gao Kailun Yao Spin-dependent thermoelectric effects in Fe-C6 doped monolayer MoS2 |
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Abstract By using the non-equilibrium Green’s function with density functional theory, we have studied the thermal spin transport properties of Fe-C6 cluster doped monolayer MoS2. The results show that the device has a perfect Seebeck effect under temperature difference without gate voltage or bias voltage. Moreover, we also find the thermal colossal magnetoresistance effect, which is as high as 107%. The competition between spin up electrons and spin down holes of the parallel spin configuration leads to peculiar behavior of colossal magnetoresistance and thermo-current, which is essential for the design of thermal transistors. These results are useful in future MoS2-based multifunctional spin caloritronic devices. |
format |
article |
author |
Lin Zhu Fei Zou Guoying Gao Kailun Yao |
author_facet |
Lin Zhu Fei Zou Guoying Gao Kailun Yao |
author_sort |
Lin Zhu |
title |
Spin-dependent thermoelectric effects in Fe-C6 doped monolayer MoS2 |
title_short |
Spin-dependent thermoelectric effects in Fe-C6 doped monolayer MoS2 |
title_full |
Spin-dependent thermoelectric effects in Fe-C6 doped monolayer MoS2 |
title_fullStr |
Spin-dependent thermoelectric effects in Fe-C6 doped monolayer MoS2 |
title_full_unstemmed |
Spin-dependent thermoelectric effects in Fe-C6 doped monolayer MoS2 |
title_sort |
spin-dependent thermoelectric effects in fe-c6 doped monolayer mos2 |
publisher |
Nature Portfolio |
publishDate |
2017 |
url |
https://doaj.org/article/f96bf1b25ad44091a164a2e87abce1f3 |
work_keys_str_mv |
AT linzhu spindependentthermoelectriceffectsinfec6dopedmonolayermos2 AT feizou spindependentthermoelectriceffectsinfec6dopedmonolayermos2 AT guoyinggao spindependentthermoelectriceffectsinfec6dopedmonolayermos2 AT kailunyao spindependentthermoelectriceffectsinfec6dopedmonolayermos2 |
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1718384693307506688 |