Si-rich Silicon Nitride for Nonlinear Signal Processing Applications

Abstract Nonlinear silicon photonic devices have attracted considerable attention thanks to their ability to show large third-order nonlinear effects at moderate power levels allowing for all-optical signal processing functionalities in miniaturized components. Although significant efforts have been...

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Autores principales:	Cosimo Lacava, Stevan Stankovic, Ali Z. Khokhar, T. Dominguez Bucio, F. Y. Gardes, Graham T. Reed, David J. Richardson, Periklis Petropoulos
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/fa14a661e7c94b169cc53fcedee9b948
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spelling	oai:doaj.org-article:fa14a661e7c94b169cc53fcedee9b9482021-12-02T16:08:10ZSi-rich Silicon Nitride for Nonlinear Signal Processing Applications10.1038/s41598-017-00062-62045-2322https://doaj.org/article/fa14a661e7c94b169cc53fcedee9b9482017-02-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-00062-6https://doaj.org/toc/2045-2322Abstract Nonlinear silicon photonic devices have attracted considerable attention thanks to their ability to show large third-order nonlinear effects at moderate power levels allowing for all-optical signal processing functionalities in miniaturized components. Although significant efforts have been made and many nonlinear optical functions have already been demonstrated in this platform, the performance of nonlinear silicon photonic devices remains fundamentally limited at the telecom wavelength region due to the two photon absorption (TPA) and related effects. In this work, we propose an alternative CMOS-compatible platform, based on silicon-rich silicon nitride that can overcome this limitation. By carefully selecting the material deposition parameters, we show that both of the device linear and nonlinear properties can be tuned in order to exhibit the desired behaviour at the selected wavelength region. A rigorous and systematic fabrication and characterization campaign of different material compositions is presented, enabling us to demonstrate TPA-free CMOS-compatible waveguides with low linear loss (~1.5 dB/cm) and enhanced Kerr nonlinear response (Re{γ} = 16 Wm−1). Thanks to these properties, our nonlinear waveguides are able to produce a π nonlinear phase shift, paving the way for the development of practical devices for future optical communication applications.Cosimo LacavaStevan StankovicAli Z. KhokharT. Dominguez BucioF. Y. GardesGraham T. ReedDavid J. RichardsonPeriklis PetropoulosNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-13 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Cosimo Lacava Stevan Stankovic Ali Z. Khokhar T. Dominguez Bucio F. Y. Gardes Graham T. Reed David J. Richardson Periklis Petropoulos Si-rich Silicon Nitride for Nonlinear Signal Processing Applications
description	Abstract Nonlinear silicon photonic devices have attracted considerable attention thanks to their ability to show large third-order nonlinear effects at moderate power levels allowing for all-optical signal processing functionalities in miniaturized components. Although significant efforts have been made and many nonlinear optical functions have already been demonstrated in this platform, the performance of nonlinear silicon photonic devices remains fundamentally limited at the telecom wavelength region due to the two photon absorption (TPA) and related effects. In this work, we propose an alternative CMOS-compatible platform, based on silicon-rich silicon nitride that can overcome this limitation. By carefully selecting the material deposition parameters, we show that both of the device linear and nonlinear properties can be tuned in order to exhibit the desired behaviour at the selected wavelength region. A rigorous and systematic fabrication and characterization campaign of different material compositions is presented, enabling us to demonstrate TPA-free CMOS-compatible waveguides with low linear loss (~1.5 dB/cm) and enhanced Kerr nonlinear response (Re{γ} = 16 Wm−1). Thanks to these properties, our nonlinear waveguides are able to produce a π nonlinear phase shift, paving the way for the development of practical devices for future optical communication applications.
format	article
author	Cosimo Lacava Stevan Stankovic Ali Z. Khokhar T. Dominguez Bucio F. Y. Gardes Graham T. Reed David J. Richardson Periklis Petropoulos
author_facet	Cosimo Lacava Stevan Stankovic Ali Z. Khokhar T. Dominguez Bucio F. Y. Gardes Graham T. Reed David J. Richardson Periklis Petropoulos
author_sort	Cosimo Lacava
title	Si-rich Silicon Nitride for Nonlinear Signal Processing Applications
title_short	Si-rich Silicon Nitride for Nonlinear Signal Processing Applications
title_full	Si-rich Silicon Nitride for Nonlinear Signal Processing Applications
title_fullStr	Si-rich Silicon Nitride for Nonlinear Signal Processing Applications
title_full_unstemmed	Si-rich Silicon Nitride for Nonlinear Signal Processing Applications
title_sort	si-rich silicon nitride for nonlinear signal processing applications
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/fa14a661e7c94b169cc53fcedee9b948
work_keys_str_mv	AT cosimolacava sirichsiliconnitridefornonlinearsignalprocessingapplications AT stevanstankovic sirichsiliconnitridefornonlinearsignalprocessingapplications AT alizkhokhar sirichsiliconnitridefornonlinearsignalprocessingapplications AT tdominguezbucio sirichsiliconnitridefornonlinearsignalprocessingapplications AT fygardes sirichsiliconnitridefornonlinearsignalprocessingapplications AT grahamtreed sirichsiliconnitridefornonlinearsignalprocessingapplications AT davidjrichardson sirichsiliconnitridefornonlinearsignalprocessingapplications AT periklispetropoulos sirichsiliconnitridefornonlinearsignalprocessingapplications
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Si-rich Silicon Nitride for Nonlinear Signal Processing Applications

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