Relaxation processes in silicon heterojunction solar cells probed via noise spectroscopy

Abstract We have employed state-of-the-art cross-correlation noise spectroscopy (CCNS) to study carrier dynamics in silicon heterojunction solar cells (SHJ SCs). These cells were composed of a light absorbing n-doped monocrystalline silicon wafer contacted by passivating layers of i-a-Si:H and doped...

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Autores principales:	Kevin Davenport, C. T. Trinh, Mark Hayward, Klaus Lips, Andrey Rogachev
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/fa3a1c691619482286bfa8b0188083a0
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spelling	oai:doaj.org-article:fa3a1c691619482286bfa8b0188083a02021-12-02T18:02:50ZRelaxation processes in silicon heterojunction solar cells probed via noise spectroscopy10.1038/s41598-021-92866-w2045-2322https://doaj.org/article/fa3a1c691619482286bfa8b0188083a02021-06-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-92866-whttps://doaj.org/toc/2045-2322Abstract We have employed state-of-the-art cross-correlation noise spectroscopy (CCNS) to study carrier dynamics in silicon heterojunction solar cells (SHJ SCs). These cells were composed of a light absorbing n-doped monocrystalline silicon wafer contacted by passivating layers of i-a-Si:H and doped a-Si:H selective contact layers. Using CCNS, we are able to resolve and characterize four separate noise contributions: (1) shot noise with Fano factor close to unity due to holes tunneling through the np-junction, (2) a 1/f term connected to local potential fluctuations of charges trapped in a-Si:H defects, (3) generation-recombination noise with a time constant between 30 and 50 μs and attributed to recombination of holes at the interface between the ITO and n-a-Si:H window layer, and (4) a low-frequency generation-recombination term observed below 100 K which we assign to thermal emission over the ITO/ni-a-Si:H interface barrier. These results not only indicate that CCNS is capable of reveling otherwise undetectable relaxation process in SHJ SCs and other multi-layer devices, but also that the technique has a spatial selectivity allowing for the identification of the layer or interface where these processes are taking place.Kevin DavenportC. T. TrinhMark HaywardKlaus LipsAndrey RogachevNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-10 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Kevin Davenport C. T. Trinh Mark Hayward Klaus Lips Andrey Rogachev Relaxation processes in silicon heterojunction solar cells probed via noise spectroscopy
description	Abstract We have employed state-of-the-art cross-correlation noise spectroscopy (CCNS) to study carrier dynamics in silicon heterojunction solar cells (SHJ SCs). These cells were composed of a light absorbing n-doped monocrystalline silicon wafer contacted by passivating layers of i-a-Si:H and doped a-Si:H selective contact layers. Using CCNS, we are able to resolve and characterize four separate noise contributions: (1) shot noise with Fano factor close to unity due to holes tunneling through the np-junction, (2) a 1/f term connected to local potential fluctuations of charges trapped in a-Si:H defects, (3) generation-recombination noise with a time constant between 30 and 50 μs and attributed to recombination of holes at the interface between the ITO and n-a-Si:H window layer, and (4) a low-frequency generation-recombination term observed below 100 K which we assign to thermal emission over the ITO/ni-a-Si:H interface barrier. These results not only indicate that CCNS is capable of reveling otherwise undetectable relaxation process in SHJ SCs and other multi-layer devices, but also that the technique has a spatial selectivity allowing for the identification of the layer or interface where these processes are taking place.
format	article
author	Kevin Davenport C. T. Trinh Mark Hayward Klaus Lips Andrey Rogachev
author_facet	Kevin Davenport C. T. Trinh Mark Hayward Klaus Lips Andrey Rogachev
author_sort	Kevin Davenport
title	Relaxation processes in silicon heterojunction solar cells probed via noise spectroscopy
title_short	Relaxation processes in silicon heterojunction solar cells probed via noise spectroscopy
title_full	Relaxation processes in silicon heterojunction solar cells probed via noise spectroscopy
title_fullStr	Relaxation processes in silicon heterojunction solar cells probed via noise spectroscopy
title_full_unstemmed	Relaxation processes in silicon heterojunction solar cells probed via noise spectroscopy
title_sort	relaxation processes in silicon heterojunction solar cells probed via noise spectroscopy
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/fa3a1c691619482286bfa8b0188083a0
work_keys_str_mv	AT kevindavenport relaxationprocessesinsiliconheterojunctionsolarcellsprobedvianoisespectroscopy AT cttrinh relaxationprocessesinsiliconheterojunctionsolarcellsprobedvianoisespectroscopy AT markhayward relaxationprocessesinsiliconheterojunctionsolarcellsprobedvianoisespectroscopy AT klauslips relaxationprocessesinsiliconheterojunctionsolarcellsprobedvianoisespectroscopy AT andreyrogachev relaxationprocessesinsiliconheterojunctionsolarcellsprobedvianoisespectroscopy
_version_	1718378905783500800

Relaxation processes in silicon heterojunction solar cells probed via noise spectroscopy

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