Layer-dependent semiconductor-metal transition of SnO/Si(001) heterostructure and device application

Abstract As the downscaling of electronic devices continues, the problems of leakage currents and heat dissipation become more and more serious. To address these issues, new materials and new structures are explored. Here, we propose an interesting heterostructure made of ultrathin SnO layers on Si(...

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Autores principales:	Chengcheng Xiao, Fang Wang, Yao Wang, Shengyuan A. Yang, Jianzhong Jiang, Ming Yang, Yunhao Lu, Shijie Wang, Yuanping Feng
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/fa3a69bc665d4590a5b4aff6a3cf9c34
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spelling	oai:doaj.org-article:fa3a69bc665d4590a5b4aff6a3cf9c342021-12-02T11:52:26ZLayer-dependent semiconductor-metal transition of SnO/Si(001) heterostructure and device application10.1038/s41598-017-02832-82045-2322https://doaj.org/article/fa3a69bc665d4590a5b4aff6a3cf9c342017-05-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-02832-8https://doaj.org/toc/2045-2322Abstract As the downscaling of electronic devices continues, the problems of leakage currents and heat dissipation become more and more serious. To address these issues, new materials and new structures are explored. Here, we propose an interesting heterostructure made of ultrathin SnO layers on Si(001) surface. Our first-principle calculations show that a single layer of SnO on Si(001) surface is a semiconductor, but a bilayer SnO on the same surface is metallic. This metal-semiconductor dichotomy allows construction of single-2D-material-based electronic devices with low contact resistance and low leakage currents. In particular, due to the interaction between Sn and the Si substrate, the semiconducting monolayer-SnO/Si(001) has a highly anisotropic band structure with a much lighter hole effective mass along one direction than that of Si and most other 2D materials, indicating a high carrier mobility. Furthermore, by combining density functional theory and nonequilibrium Green’s function method, we directly investigate the transport characteristics of a field effect transistor based on the proposed heterostructures, which shows very low contact resistance, negligible leakage current, and easy gate control at a compact channel length.Chengcheng XiaoFang WangYao WangShengyuan A. YangJianzhong JiangMing YangYunhao LuShijie WangYuanping FengNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-9 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Chengcheng Xiao Fang Wang Yao Wang Shengyuan A. Yang Jianzhong Jiang Ming Yang Yunhao Lu Shijie Wang Yuanping Feng Layer-dependent semiconductor-metal transition of SnO/Si(001) heterostructure and device application
description	Abstract As the downscaling of electronic devices continues, the problems of leakage currents and heat dissipation become more and more serious. To address these issues, new materials and new structures are explored. Here, we propose an interesting heterostructure made of ultrathin SnO layers on Si(001) surface. Our first-principle calculations show that a single layer of SnO on Si(001) surface is a semiconductor, but a bilayer SnO on the same surface is metallic. This metal-semiconductor dichotomy allows construction of single-2D-material-based electronic devices with low contact resistance and low leakage currents. In particular, due to the interaction between Sn and the Si substrate, the semiconducting monolayer-SnO/Si(001) has a highly anisotropic band structure with a much lighter hole effective mass along one direction than that of Si and most other 2D materials, indicating a high carrier mobility. Furthermore, by combining density functional theory and nonequilibrium Green’s function method, we directly investigate the transport characteristics of a field effect transistor based on the proposed heterostructures, which shows very low contact resistance, negligible leakage current, and easy gate control at a compact channel length.
format	article
author	Chengcheng Xiao Fang Wang Yao Wang Shengyuan A. Yang Jianzhong Jiang Ming Yang Yunhao Lu Shijie Wang Yuanping Feng
author_facet	Chengcheng Xiao Fang Wang Yao Wang Shengyuan A. Yang Jianzhong Jiang Ming Yang Yunhao Lu Shijie Wang Yuanping Feng
author_sort	Chengcheng Xiao
title	Layer-dependent semiconductor-metal transition of SnO/Si(001) heterostructure and device application
title_short	Layer-dependent semiconductor-metal transition of SnO/Si(001) heterostructure and device application
title_full	Layer-dependent semiconductor-metal transition of SnO/Si(001) heterostructure and device application
title_fullStr	Layer-dependent semiconductor-metal transition of SnO/Si(001) heterostructure and device application
title_full_unstemmed	Layer-dependent semiconductor-metal transition of SnO/Si(001) heterostructure and device application
title_sort	layer-dependent semiconductor-metal transition of sno/si(001) heterostructure and device application
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/fa3a69bc665d4590a5b4aff6a3cf9c34
work_keys_str_mv	AT chengchengxiao layerdependentsemiconductormetaltransitionofsnosi001heterostructureanddeviceapplication AT fangwang layerdependentsemiconductormetaltransitionofsnosi001heterostructureanddeviceapplication AT yaowang layerdependentsemiconductormetaltransitionofsnosi001heterostructureanddeviceapplication AT shengyuanayang layerdependentsemiconductormetaltransitionofsnosi001heterostructureanddeviceapplication AT jianzhongjiang layerdependentsemiconductormetaltransitionofsnosi001heterostructureanddeviceapplication AT mingyang layerdependentsemiconductormetaltransitionofsnosi001heterostructureanddeviceapplication AT yunhaolu layerdependentsemiconductormetaltransitionofsnosi001heterostructureanddeviceapplication AT shijiewang layerdependentsemiconductormetaltransitionofsnosi001heterostructureanddeviceapplication AT yuanpingfeng layerdependentsemiconductormetaltransitionofsnosi001heterostructureanddeviceapplication
_version_	1718395082782015488

Layer-dependent semiconductor-metal transition of SnO/Si(001) heterostructure and device application

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