Layer-dependent semiconductor-metal transition of SnO/Si(001) heterostructure and device application

Abstract As the downscaling of electronic devices continues, the problems of leakage currents and heat dissipation become more and more serious. To address these issues, new materials and new structures are explored. Here, we propose an interesting heterostructure made of ultrathin SnO layers on Si(...

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Autores principales: Chengcheng Xiao, Fang Wang, Yao Wang, Shengyuan A. Yang, Jianzhong Jiang, Ming Yang, Yunhao Lu, Shijie Wang, Yuanping Feng
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2017
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Acceso en línea:https://doaj.org/article/fa3a69bc665d4590a5b4aff6a3cf9c34
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