Interlayer excitons in a bulk van der Waals semiconductor

Excitons, quasi-particles of bound electron-hole pairs, are at the core of the optoelectronic properties of layered transition metal dichalcogenides. Here, the authors unveil the presence of interlayer excitons in bulk van der Waals semiconductors, arising from strong localization and spin-valley co...

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Autores principales:	Ashish Arora, Matthias Drüppel, Robert Schmidt, Thorsten Deilmann, Robert Schneider, Maciej R. Molas, Philipp Marauhn, Steffen Michaelis de Vasconcellos, Marek Potemski, Michael Rohlfing, Rudolf Bratschitsch
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/fb40a124507640ee95609eabe71d94a6
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spelling	oai:doaj.org-article:fb40a124507640ee95609eabe71d94a62021-12-02T15:38:38ZInterlayer excitons in a bulk van der Waals semiconductor10.1038/s41467-017-00691-52041-1723https://doaj.org/article/fb40a124507640ee95609eabe71d94a62017-09-01T00:00:00Zhttps://doi.org/10.1038/s41467-017-00691-5https://doaj.org/toc/2041-1723Excitons, quasi-particles of bound electron-hole pairs, are at the core of the optoelectronic properties of layered transition metal dichalcogenides. Here, the authors unveil the presence of interlayer excitons in bulk van der Waals semiconductors, arising from strong localization and spin-valley coupling of charge carriers.Ashish AroraMatthias DrüppelRobert SchmidtThorsten DeilmannRobert SchneiderMaciej R. MolasPhilipp MarauhnSteffen Michaelis de VasconcellosMarek PotemskiMichael RohlfingRudolf BratschitschNature PortfolioarticleScienceQENNature Communications, Vol 8, Iss 1, Pp 1-6 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Ashish Arora Matthias Drüppel Robert Schmidt Thorsten Deilmann Robert Schneider Maciej R. Molas Philipp Marauhn Steffen Michaelis de Vasconcellos Marek Potemski Michael Rohlfing Rudolf Bratschitsch Interlayer excitons in a bulk van der Waals semiconductor
description	Excitons, quasi-particles of bound electron-hole pairs, are at the core of the optoelectronic properties of layered transition metal dichalcogenides. Here, the authors unveil the presence of interlayer excitons in bulk van der Waals semiconductors, arising from strong localization and spin-valley coupling of charge carriers.
format	article
author	Ashish Arora Matthias Drüppel Robert Schmidt Thorsten Deilmann Robert Schneider Maciej R. Molas Philipp Marauhn Steffen Michaelis de Vasconcellos Marek Potemski Michael Rohlfing Rudolf Bratschitsch
author_facet	Ashish Arora Matthias Drüppel Robert Schmidt Thorsten Deilmann Robert Schneider Maciej R. Molas Philipp Marauhn Steffen Michaelis de Vasconcellos Marek Potemski Michael Rohlfing Rudolf Bratschitsch
author_sort	Ashish Arora
title	Interlayer excitons in a bulk van der Waals semiconductor
title_short	Interlayer excitons in a bulk van der Waals semiconductor
title_full	Interlayer excitons in a bulk van der Waals semiconductor
title_fullStr	Interlayer excitons in a bulk van der Waals semiconductor
title_full_unstemmed	Interlayer excitons in a bulk van der Waals semiconductor
title_sort	interlayer excitons in a bulk van der waals semiconductor
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/fb40a124507640ee95609eabe71d94a6
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Interlayer excitons in a bulk van der Waals semiconductor

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