Multilayer graphene shows intrinsic resistance peaks in the carrier density dependence

Abstract Since the advent of graphene, a variety of studies have been performed to elucidate its fundamental physics, or to explore its practical applications. Gate-tunable resistance is one of the most important properties of graphene and has been studied in 1–3 layer graphene in a number of effort...

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Autores principales:	Taiki Hirahara, Ryoya Ebisuoka, Takushi Oka, Tomoaki Nakasuga, Shingo Tajima, Kenji Watanabe, Takashi Taniguchi, Ryuta Yagi
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2018
Materias:	Multilayer Graphene Peak Resistance Carrier Density Dependence Voltage-dependent Gating Charge Neutrality Point Medicine R Science Q
Acceso en línea:	https://doaj.org/article/fb81926e20d243e591f01874e281afd4
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spelling	oai:doaj.org-article:fb81926e20d243e591f01874e281afd42021-12-02T15:08:12ZMultilayer graphene shows intrinsic resistance peaks in the carrier density dependence10.1038/s41598-018-32214-72045-2322https://doaj.org/article/fb81926e20d243e591f01874e281afd42018-09-01T00:00:00Zhttps://doi.org/10.1038/s41598-018-32214-7https://doaj.org/toc/2045-2322Abstract Since the advent of graphene, a variety of studies have been performed to elucidate its fundamental physics, or to explore its practical applications. Gate-tunable resistance is one of the most important properties of graphene and has been studied in 1–3 layer graphene in a number of efforts to control the band gap to obtain a large on-off ratio. On the other hand, the transport property of multilayer graphene with more than three layers is less well understood. Here we show a new aspect of multilayer graphene. We found that four-layer graphene shows intrinsic peak structures in the gate voltage dependence of its resistance at zero magnetic field. Measurement of quantum oscillations in magnetic field confirmed that the peaks originate from the specific band structure of graphene and appear at the carrier density for the bottoms of conduction bands and valence bands. The intrinsic peak structures should generally be observed in AB-stacked multilayer graphene. The present results would be significant for understanding the physics of graphene and making graphene FET devices.Taiki HiraharaRyoya EbisuokaTakushi OkaTomoaki NakasugaShingo TajimaKenji WatanabeTakashi TaniguchiRyuta YagiNature PortfolioarticleMultilayer GraphenePeak ResistanceCarrier Density DependenceVoltage-dependent GatingCharge Neutrality PointMedicineRScienceQENScientific Reports, Vol 8, Iss 1, Pp 1-8 (2018)
institution	DOAJ
collection	DOAJ
language	EN
topic	Multilayer Graphene Peak Resistance Carrier Density Dependence Voltage-dependent Gating Charge Neutrality Point Medicine R Science Q
spellingShingle	Multilayer Graphene Peak Resistance Carrier Density Dependence Voltage-dependent Gating Charge Neutrality Point Medicine R Science Q Taiki Hirahara Ryoya Ebisuoka Takushi Oka Tomoaki Nakasuga Shingo Tajima Kenji Watanabe Takashi Taniguchi Ryuta Yagi Multilayer graphene shows intrinsic resistance peaks in the carrier density dependence
description	Abstract Since the advent of graphene, a variety of studies have been performed to elucidate its fundamental physics, or to explore its practical applications. Gate-tunable resistance is one of the most important properties of graphene and has been studied in 1–3 layer graphene in a number of efforts to control the band gap to obtain a large on-off ratio. On the other hand, the transport property of multilayer graphene with more than three layers is less well understood. Here we show a new aspect of multilayer graphene. We found that four-layer graphene shows intrinsic peak structures in the gate voltage dependence of its resistance at zero magnetic field. Measurement of quantum oscillations in magnetic field confirmed that the peaks originate from the specific band structure of graphene and appear at the carrier density for the bottoms of conduction bands and valence bands. The intrinsic peak structures should generally be observed in AB-stacked multilayer graphene. The present results would be significant for understanding the physics of graphene and making graphene FET devices.
format	article
author	Taiki Hirahara Ryoya Ebisuoka Takushi Oka Tomoaki Nakasuga Shingo Tajima Kenji Watanabe Takashi Taniguchi Ryuta Yagi
author_facet	Taiki Hirahara Ryoya Ebisuoka Takushi Oka Tomoaki Nakasuga Shingo Tajima Kenji Watanabe Takashi Taniguchi Ryuta Yagi
author_sort	Taiki Hirahara
title	Multilayer graphene shows intrinsic resistance peaks in the carrier density dependence
title_short	Multilayer graphene shows intrinsic resistance peaks in the carrier density dependence
title_full	Multilayer graphene shows intrinsic resistance peaks in the carrier density dependence
title_fullStr	Multilayer graphene shows intrinsic resistance peaks in the carrier density dependence
title_full_unstemmed	Multilayer graphene shows intrinsic resistance peaks in the carrier density dependence
title_sort	multilayer graphene shows intrinsic resistance peaks in the carrier density dependence
publisher	Nature Portfolio
publishDate	2018
url	https://doaj.org/article/fb81926e20d243e591f01874e281afd4
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_version_	1718388295192281088

Multilayer graphene shows intrinsic resistance peaks in the carrier density dependence

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