Two-Dimensional TeB Structures with Anisotropic Carrier Mobility and Tunable Bandgap

Two-dimensional (2D) semiconductors with desirable bandgaps and high carrier mobility have great potential in electronic and optoelectronic applications. In this work, we proposed <i>α</i>-TeB and <i>β</i>-TeB monolayers using density functional theory (DFT) combined with the...

Descripción completa

Guardado en:
Detalles Bibliográficos
Autores principales: Yukai Zhang, Xin Qu, Lihua Yang, Xin Zhong, Dandan Wang, Jian Wang, Baiyang Sun, Chang Liu, Jian Lv, Jinghai Yang
Formato: article
Lenguaje:EN
Publicado: MDPI AG 2021
Materias:
Acceso en línea:https://doaj.org/article/fbddd3c2811b4f8bb62d4d64fc82cdc6
Etiquetas: Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
id oai:doaj.org-article:fbddd3c2811b4f8bb62d4d64fc82cdc6
record_format dspace
spelling oai:doaj.org-article:fbddd3c2811b4f8bb62d4d64fc82cdc62021-11-11T18:25:31ZTwo-Dimensional TeB Structures with Anisotropic Carrier Mobility and Tunable Bandgap10.3390/molecules262164041420-3049https://doaj.org/article/fbddd3c2811b4f8bb62d4d64fc82cdc62021-10-01T00:00:00Zhttps://www.mdpi.com/1420-3049/26/21/6404https://doaj.org/toc/1420-3049Two-dimensional (2D) semiconductors with desirable bandgaps and high carrier mobility have great potential in electronic and optoelectronic applications. In this work, we proposed <i>α</i>-TeB and <i>β</i>-TeB monolayers using density functional theory (DFT) combined with the particle swarm-intelligent global structure search method. The high dynamical and thermal stabilities of two TeB structures indicate high feasibility for experimental synthesis. The electronic structure calculations show that the two structures are indirect bandgap semiconductors with bandgaps of 2.3 and 2.1 eV, respectively. The hole mobility of the <i>β</i>-TeB sheet is up to 6.90 × 10<sup>2</sup> cm<sup>2</sup> V<sup>−1</sup> s<sup>−1</sup>. By reconstructing the two structures, we identified two new horizontal and lateral heterostructures, and the lateral heterostructure presents a direct band gap, indicating more probable applications could be further explored for TeB sheets.Yukai ZhangXin QuLihua YangXin ZhongDandan WangJian WangBaiyang SunChang LiuJian LvJinghai YangMDPI AGarticletwo-dimensional TeB structurescarrier mobilityhorizonal or lateral heterostructuresdensity functional theoryOrganic chemistryQD241-441ENMolecules, Vol 26, Iss 6404, p 6404 (2021)
institution DOAJ
collection DOAJ
language EN
topic two-dimensional TeB structures
carrier mobility
horizonal or lateral heterostructures
density functional theory
Organic chemistry
QD241-441
spellingShingle two-dimensional TeB structures
carrier mobility
horizonal or lateral heterostructures
density functional theory
Organic chemistry
QD241-441
Yukai Zhang
Xin Qu
Lihua Yang
Xin Zhong
Dandan Wang
Jian Wang
Baiyang Sun
Chang Liu
Jian Lv
Jinghai Yang
Two-Dimensional TeB Structures with Anisotropic Carrier Mobility and Tunable Bandgap
description Two-dimensional (2D) semiconductors with desirable bandgaps and high carrier mobility have great potential in electronic and optoelectronic applications. In this work, we proposed <i>α</i>-TeB and <i>β</i>-TeB monolayers using density functional theory (DFT) combined with the particle swarm-intelligent global structure search method. The high dynamical and thermal stabilities of two TeB structures indicate high feasibility for experimental synthesis. The electronic structure calculations show that the two structures are indirect bandgap semiconductors with bandgaps of 2.3 and 2.1 eV, respectively. The hole mobility of the <i>β</i>-TeB sheet is up to 6.90 × 10<sup>2</sup> cm<sup>2</sup> V<sup>−1</sup> s<sup>−1</sup>. By reconstructing the two structures, we identified two new horizontal and lateral heterostructures, and the lateral heterostructure presents a direct band gap, indicating more probable applications could be further explored for TeB sheets.
format article
author Yukai Zhang
Xin Qu
Lihua Yang
Xin Zhong
Dandan Wang
Jian Wang
Baiyang Sun
Chang Liu
Jian Lv
Jinghai Yang
author_facet Yukai Zhang
Xin Qu
Lihua Yang
Xin Zhong
Dandan Wang
Jian Wang
Baiyang Sun
Chang Liu
Jian Lv
Jinghai Yang
author_sort Yukai Zhang
title Two-Dimensional TeB Structures with Anisotropic Carrier Mobility and Tunable Bandgap
title_short Two-Dimensional TeB Structures with Anisotropic Carrier Mobility and Tunable Bandgap
title_full Two-Dimensional TeB Structures with Anisotropic Carrier Mobility and Tunable Bandgap
title_fullStr Two-Dimensional TeB Structures with Anisotropic Carrier Mobility and Tunable Bandgap
title_full_unstemmed Two-Dimensional TeB Structures with Anisotropic Carrier Mobility and Tunable Bandgap
title_sort two-dimensional teb structures with anisotropic carrier mobility and tunable bandgap
publisher MDPI AG
publishDate 2021
url https://doaj.org/article/fbddd3c2811b4f8bb62d4d64fc82cdc6
work_keys_str_mv AT yukaizhang twodimensionaltebstructureswithanisotropiccarriermobilityandtunablebandgap
AT xinqu twodimensionaltebstructureswithanisotropiccarriermobilityandtunablebandgap
AT lihuayang twodimensionaltebstructureswithanisotropiccarriermobilityandtunablebandgap
AT xinzhong twodimensionaltebstructureswithanisotropiccarriermobilityandtunablebandgap
AT dandanwang twodimensionaltebstructureswithanisotropiccarriermobilityandtunablebandgap
AT jianwang twodimensionaltebstructureswithanisotropiccarriermobilityandtunablebandgap
AT baiyangsun twodimensionaltebstructureswithanisotropiccarriermobilityandtunablebandgap
AT changliu twodimensionaltebstructureswithanisotropiccarriermobilityandtunablebandgap
AT jianlv twodimensionaltebstructureswithanisotropiccarriermobilityandtunablebandgap
AT jinghaiyang twodimensionaltebstructureswithanisotropiccarriermobilityandtunablebandgap
_version_ 1718431860120354816