Grain size dependent photoresponsivity in GaAs films formed on glass with Ge seed layers

Abstract The strong correlation between grain size and photoresponsivity in polycrystalline GaAs films on glass was experimentally demonstrated using Ge seed layers with a wide range of grain sizes (1‒330 μm). The crystal evaluations using Raman spectroscopy, scanning electron microscopy, electron b...

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Autores principales:	T. Nishida, K. Igura, T. Imajo, T. Suemasu, K. Toko
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/fbe1ad27924c4c7e83f24a533b1cae63
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spelling	oai:doaj.org-article:fbe1ad27924c4c7e83f24a533b1cae632021-12-02T15:55:13ZGrain size dependent photoresponsivity in GaAs films formed on glass with Ge seed layers10.1038/s41598-021-89342-w2045-2322https://doaj.org/article/fbe1ad27924c4c7e83f24a533b1cae632021-05-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-89342-whttps://doaj.org/toc/2045-2322Abstract The strong correlation between grain size and photoresponsivity in polycrystalline GaAs films on glass was experimentally demonstrated using Ge seed layers with a wide range of grain sizes (1‒330 μm). The crystal evaluations using Raman spectroscopy, scanning electron microscopy, electron backscatter diffraction, and transmission electron microscopy revealed that 500-nm-thick GaAs films epitaxially grown from the Ge seed layers at 550 °C inherited the grain boundaries and crystal orientations in Ge. With increasing grain size, the photoresponsivity corresponding to GaAs increased from 0.01 to 3 A W−1 under a bias voltage of 0.3 V. The maximum value approached that of the GaAs film formed simultaneously on a single-crystal Ge wafer, indicating the high potential of the large-grained GaAs film. Knowledge gained from this study will be essential for designing advanced solar cells based on polycrystalline III–V compound semiconductors using inexpensive substrates.T. NishidaK. IguraT. ImajoT. SuemasuK. TokoNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-7 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q T. Nishida K. Igura T. Imajo T. Suemasu K. Toko Grain size dependent photoresponsivity in GaAs films formed on glass with Ge seed layers
description	Abstract The strong correlation between grain size and photoresponsivity in polycrystalline GaAs films on glass was experimentally demonstrated using Ge seed layers with a wide range of grain sizes (1‒330 μm). The crystal evaluations using Raman spectroscopy, scanning electron microscopy, electron backscatter diffraction, and transmission electron microscopy revealed that 500-nm-thick GaAs films epitaxially grown from the Ge seed layers at 550 °C inherited the grain boundaries and crystal orientations in Ge. With increasing grain size, the photoresponsivity corresponding to GaAs increased from 0.01 to 3 A W−1 under a bias voltage of 0.3 V. The maximum value approached that of the GaAs film formed simultaneously on a single-crystal Ge wafer, indicating the high potential of the large-grained GaAs film. Knowledge gained from this study will be essential for designing advanced solar cells based on polycrystalline III–V compound semiconductors using inexpensive substrates.
format	article
author	T. Nishida K. Igura T. Imajo T. Suemasu K. Toko
author_facet	T. Nishida K. Igura T. Imajo T. Suemasu K. Toko
author_sort	T. Nishida
title	Grain size dependent photoresponsivity in GaAs films formed on glass with Ge seed layers
title_short	Grain size dependent photoresponsivity in GaAs films formed on glass with Ge seed layers
title_full	Grain size dependent photoresponsivity in GaAs films formed on glass with Ge seed layers
title_fullStr	Grain size dependent photoresponsivity in GaAs films formed on glass with Ge seed layers
title_full_unstemmed	Grain size dependent photoresponsivity in GaAs films formed on glass with Ge seed layers
title_sort	grain size dependent photoresponsivity in gaas films formed on glass with ge seed layers
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/fbe1ad27924c4c7e83f24a533b1cae63
work_keys_str_mv	AT tnishida grainsizedependentphotoresponsivityingaasfilmsformedonglasswithgeseedlayers AT kigura grainsizedependentphotoresponsivityingaasfilmsformedonglasswithgeseedlayers AT timajo grainsizedependentphotoresponsivityingaasfilmsformedonglasswithgeseedlayers AT tsuemasu grainsizedependentphotoresponsivityingaasfilmsformedonglasswithgeseedlayers AT ktoko grainsizedependentphotoresponsivityingaasfilmsformedonglasswithgeseedlayers
_version_	1718385428946485248

Grain size dependent photoresponsivity in GaAs films formed on glass with Ge seed layers

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